500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=13.4A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.43Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=13.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.48Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

PFCPWM Combination Controller

Introduction This application note describes step-by-step design considerations for a power supply using the FAN480X controller. The FAN480X combines a PFC controller and a PWM controller. The PFC controller employs average current mode control for Continuous Conduction Mode (CCM) boost converter

Power MOSFET, N-Channel, QFET®, 500 V, 13.5 A, 480 mΩ, TO-3P

这些 N 沟道增强型功率场效应晶体管采用飞兆专有的平面条形 DMOS 技术生产。这一先进技术是专为最大限度地降低导通电阻，提供卓越的开关性能，以及在雪崩击穿和换相情况下承受高能量脉冲而开发的。这些器件非常适合高效开关电源、功率因数校正和半桥拓扑的电子灯整流器。 •13.5 A，500 V，RDS(on) = 480 mΩ（最大值），条件是 VGS = 10 V，ID = 6.75 A\n•低栅极电荷（典型值43 nC)\n•低 Crss（典型值20 pF)\n•100% 经过雪崩击穿测试除非另有说明，最大绝对额定值 TC = 25°C。\n•提高了 dv/dt 性能;

功率 MOSFET，N 沟道，QFET®，FRFET®，500 V，15 A，480 mΩ，TO-3P

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •15A, 500V, RDS(on)= 480mΩ（最大值）@VGS = 10 V, ID = 7.5A栅极电荷低（典型值：43nC)\n•低 Crss（典型值20pF)\n•100% 经过雪崩击穿测试\n•快速恢复体二极管（典型值100ns)\n•Fast recovery body diode (Typ. 100ns);

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=15A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.48Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

500V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior swit

N-Channel QFET® MOSFET

这些 N 沟道增强型功率场效应晶体管采用飞兆专有的平面条形 DMOS 技术生产。这一先进技术是专为最大限度地降低导通电阻，提供卓越的开关性能，以及在雪崩击穿和换相情况下承受高能量脉冲而开发的。这些器件非常适合高效开关电源、功率因数校正和半桥拓扑的电子灯整流器。 •13.5 A，500 V，RDS(on) = 480 mΩ（最大值），条件是 VGS = 10 V，ID = 6.75 A\n•低栅极电荷（典型值43 nC)\n•低 Crss（典型值20 pF)\n•100% 经过雪崩击穿测试除非另有说明，最大绝对额定值 TC = 25°C。\n•提高了 dv/dt 性能;

500V N-Channel MOSFET

文件：767.95 Kbytes Page：9 Pages

500V N-Channel MOSFET

文件：767.95 Kbytes Page：9 Pages

500V N-Channel MOSFET

文件：767.95 Kbytes Page：9 Pages

500V N-Channel MOSFET

500V N-Channel MOSFET

500V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

500V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

Power MOSFET(Vdss=500V, Rds(on)max=0.450ohm, Id=14A)

SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamicdv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current Applications ● Switch Mode Power Supply (SMPS) ● Uninterruptible Power Supply ● High