Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET

technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for

switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Features

• 15 A, 500 V, RDS(on)= 480mΩ (Max.) @ VGS= 10 V,ID= 7.5 A

• Low Gate Charge (Typ.43 nC)

• Low Crss(Typ.20 pF)

• 100 Avalanche Tested

• Fast Recovery Body Diode (Typ.100 ns)