P-Cha nnel Enhancement MOSFET

Features  VDS=-20V, ID=-1.6A  RDS(ON)=380mΩ@VGS=-4.5V(Typ.)  RDS(ON)=520mΩ@VGS=-2.5V(Typ.)  High Power and current handing capability  Lead free product is acquired  Surface Mount Package Main Applications  Battery Protection  Load Switch  Power Management

Silicon NPN Transistor High Voltage Horizontal Output

Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: • Collector–Emitter Voltage: VCEX = 1500V • Glassivated Base–Collector Junction • Safe Operating Area @ 50µs = 20A, 400V • Switchin

Reflective Photosensor

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PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications

文件：225.65 Kbytes Page：14 Pages

PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications

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EXCALIBUR 3-STATE-OUTPUT WIDE-BANDWIDTH POWER OPERATIONAL AMPLIFIER

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