4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers

Description The FODM124, FODM121, and FODM2701 series consists of a gallium arsenide infrared emitting diode driving a phototransistor in a compact 4-pin mini-flat package. The lead pitch is 2.54 mm. The FODM2705 series consists of two gallium arsenide infrared emitting diodes connected in invers

4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers

Description The FODM124, FODM121 series, and FODM2701 consists of a gallium arsenide infrared emitting diode driving a phototransistor in a compact 4-pin mini-flat package. The lead pitch is 2.54mm. The FODM2705 consists of two gallium arsenide infrared emitting diodes connected in inverse para

4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers

Description The FODM124, FODM121, and FODM2701 series consists of a gallium arsenide infrared emitting diode driving a phototransistor in a compact 4-pin mini-flat package. The lead pitch is 2.54 mm. The FODM2705 series consists of two gallium arsenide infrared emitting diodes connected in invers

4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers

Description The FODM124, FODM121, and FODM2701 series consists of a gallium arsenide infrared emitting diode driving a phototransistor in a compact 4-pin mini-flat package. The lead pitch is 2.54 mm. The FODM2705 series consists of two gallium arsenide infrared emitting diodes connected in invers

4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers

Description The FODM124, FODM121 series, and FODM2701 consists of a gallium arsenide infrared emitting diode driving a phototransistor in a compact 4-pin mini-flat package. The lead pitch is 2.54mm. The FODM2705 consists of two gallium arsenide infrared emitting diodes connected in inverse para

4 引脚全节距微型扁平封装光电晶体管光耦合器

FODM121、FODM124 和 FODM2701 系列包含砷化镓红外线发光二极管，该二极管驱动紧凑型 4 引脚微型扁平封装中的光电晶体管。 引脚节距是 2.54 mm。FODM2705 系列包含两个反向并联的砷化镓红外线发光二极管，用于交流运行。 • More than 5mm Creepage/Clearance\n• Compact 4-Pin Surface Mount Package (2.4mm Maximum Standoff Height)\n• Current Transfer Ratio in Selected GroupsDC Input:FODM121: 50–600% FODM121A: 100–300% FODM121B: 50–150%FODM121C: 100–200%FODM124: 100% MIN FODM2701: 50–300%AC Input:FO;

4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers

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4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers

Description The FODM124, FODM121, and FODM2701 series consists of a gallium arsenide infrared emitting diode driving a phototransistor in a compact 4-pin mini-flat package. The lead pitch is 2.54 mm. The FODM2705 series consists of two gallium arsenide infrared emitting diodes connected in invers

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

NPN SILICON BIAS RESISTOR TRANSISTOR

Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolit

Silicon NPN Transistor High Voltage Power Output

Description: The NTE124 is a general purpose transistor in a TO66 type package designed for high speed switch ing, linear amplifier applications, high voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Features:

PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor in a SC-59 plastic package. NPN complement: PDTC124EK. FEATURES • Built-in bias resistors R1 and R2 (typ. 22 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space

丝印代码：-05；PNP resistor-equipped transistor

DESCRIPTION PNP resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTC124ET. FEATURES • Built-in bias resistors R1 and R2 (typ. 22 kΩ each) • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space