4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor

4-Pin Phototransistor Optocouplers

Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor

4-Pin High Operating Temperature Phototransistor Optocouplers

Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor

4-Pin DIP Phototransistor Optocouplers

Features • AC Input Response (FOD814) • Current Transfer Ratio in Selected Groups: FOD814: 20–300% FOD817: 50–600% FOD814A: 50–150% FOD817A: 80–160% FOD817B: 130–260% FOD817C: 200–400% FOD817D: 300–600% • Minimum BVCEO of 70 V Guaranteed • Safety and Regulatory

4-Pin High Operating Temperature Phototransistor Optocouplers

Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor

4-Pin High Operating Temperature Phototransistor Optocouplers

Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor

4 引脚 DIP 光电晶体管光耦合器

FOD814 包含两个反向并联的砷化镓红外线发光二极管，该二极管驱动 4 引脚双列直插封装中的硅光电晶体管输出。 FOD817 系列包含砷化镓红外线发光二极管，该二极管驱动 4 引脚双列直插封装中的硅光电晶体管。 • AC 输入响应 (FOD814)\n• 选择组中的电流传输比：\n• FOD814： 20-300%\n• FOD814A： 50-150%\n• FOD814： 50-600%\n• FOD817A： 80-160%\n• FOD817B： 130-260%\n• FOD817C： 200-400%\n• FOD817D： 300-600%\n• 保证最低 70 V 的 BVCEO\n• 安全和法规认证\n• UL1577，5000 VACRMS 持续 1 分钟\n• DIN EN/IEC60747-5-5;

4-Pin DIP Phototransistor Optocouplers

文件：534.11 Kbytes Page：12 Pages

4-Pin High Operating Temperature Phototransistor Optocouplers

Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor

4-Pin DIP Phototransistor Optocouplers

Features • AC Input Response (FOD814) • Current Transfer Ratio in Selected Groups: FOD814: 20–300% FOD817: 50–600% FOD814A: 50–150% FOD817A: 80–160% FOD817B: 130–260% FOD817C: 200–400% FOD817D: 300–600% • Minimum BVCEO of 70 V Guaranteed • Safety and Regulatory

4-Pin High Operating Temperature Phototransistor Optocouplers

Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor

包装：卷带（TR） 描述：OPTOISOLATOR 5KV TRANSISTOR 4SMD 隔离器 光隔离器 - 晶体管，光电输出

丝印代码：6D*；NPN general purpose transistor

DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complement: BC807. FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification.

NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR

Features mW Power Dissipation Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary PNP Types Available (BC807)

PNP MEDIUM POWER TRANSISTORS

DECRIPTION The STF817 and STN817 are PNP transistors manufactured using Planar Technology resulting in rugged high performance devices. ■ SURFACE-MOUNTING DEVICES IN MEDIUM POWER SOT-223 AND SOT-89 PACKAGES ■ AVAILABLE IN TAPE & REEL PACKING APPLICATIONS ■ VOLTAGE REGULATION ■ RELAY DRIV

PNP MEDIUM POWER TRANSISTORS

DECRIPTION The STF817 and STN817 are PNP transistors manufactured using Planar Technology resulting in rugged high performance devices. ■ SURFACE-MOUNTING DEVICES IN MEDIUM POWER SOT-223 AND SOT-89 PACKAGES ■ AVAILABLE IN TAPE & REEL PACKING APPLICATIONS ■ VOLTAGE REGULATION ■ RELAY DRIV

NPN MEDIUM POWER TRANSISTOR

DECRIPTION The STX817 is a PNP transistor manufactured using Planar Technology resulting in rugged high performance devices. ■ DEVICE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY APPLICATIONS ■ VOLTAGE REGULATION ■ RELAY DRIVER ■ GENERIC SWITCH