三路驱动器输出光耦合器，6 引脚 DIP 800V 零交叉

FOD410、FOD4108、FOD4116和FOD4118器件包含一个红外线发光二极管，该二极管耦合至采用两个反向并联SCR形成的混合三端双向可控硅开关，形成能够驱动分立式三端双向可控硅开关的三端双向可控硅开关功能。 FOD4116和FOD4118采用一个高效红外线发光二极管提供增强的触发灵敏度。 这些器件采用标准6引脚双列直插(DIP)封装。 •300mA通态电流\n•电压过零检测\n•高阻断电压\n•800V (FOD4108、FOD4118)\n•600V (FOD410、FOD4116)\n•高触发灵敏度\n•1.3mA (FOD4116、FOD4118)\n•2mA (FOD410、FOD4108)\n•高静态dv/dt (10,000V/µs)\n•UL、VDE、CSA认证\n•无铅装配;

6-Pin DIP High dv/dt Zero-Cross Triac Drivers

文件：404.63 Kbytes Page：13 Pages

封装/外壳：6-DIP（0.300"，7.62mm） 包装：管件 描述：OPTOISOLATOR 5KV TRIAC 6DIP 隔离器 光隔离器 - 双向可控硅，SCR 输出

6-Pin DIP Zero-Cross Triac Drivers

文件：292.45 Kbytes Page：12 Pages

6-Pin DIP Zero-Cross Triac Drivers

文件：292.45 Kbytes Page：12 Pages

封装/外壳：6-SMD，鸥翼 包装：管件 描述：OPTOISOLATOR 5KV TRIAC 6SMD 隔离器 光隔离器 - 双向可控硅，SCR 输出

6-Pin DIP Zero-Cross Triac Drivers

文件：292.45 Kbytes Page：12 Pages

6-Pin DIP Zero-Cross Triac Drivers

文件：292.45 Kbytes Page：12 Pages

6-Pin DIP Zero-Cross Triac Drivers

文件：292.45 Kbytes Page：12 Pages

6-Pin DIP Zero-Cross Triac Drivers

文件：292.45 Kbytes Page：12 Pages

6-Pin DIP Zero-Cross Triac Drivers

文件：292.45 Kbytes Page：12 Pages

6-Pin DIP Zero-Cross Triac Drivers

文件：292.45 Kbytes Page：12 Pages

RF PLL Frequency Synthesizers

GENERAL DESCRIPTION The ADF4116 family of frequency synthesizers can be used to implement local oscillators in the up-conversion and down conversion sections of wireless receivers and transmitters. They consist of a low-noise digital PFD (Phase Frequency Detector), a precision charge pump, a pr

ZERO VOLTAGE CROSSING TRIAC DRIVER OPTOCOUPLER

DESCRIPTION The IL411x consists of an AlGaAs IRLED optically coupled to a photosensitive zero crossing TRIAC network. The TRIAC consists of two inverse parallel connected monolithic SCRs. These three semiconductors are assembled in a six pin 0.3 inch dual inline package, using high insulation dou

18 mm Discrete HFET

18 mm Discrete HFET • 0.5 um gate finger length • Nominal Pout of 9.0 Watts at 2.3 GHz • Nominal PAE of 53 at 2.3 GHz • Nominal Gain of 11.5 dB at 2.3 GHz • Die Size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm)

18 mm Discrete HFET

18 mm Discrete HFET • 0.5 um gate finger length • Nominal Pout of 9.0 Watts at 2.3 GHz • Nominal PAE of 53 at 2.3 GHz • Nominal Gain of 11.5 dB at 2.3 GHz • Die Size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm)

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • New S type package, allowing supply with the radial taping