General purpose (dual transistors)

Features 1) Two 2SC3906K chips in an SMT package. 2) High breakdown voltage.

General purpose

■ Features ● High breakdown voltage ● Power dissipation: PC=300mW ● Collector Curren: IC=50mA

General purpose (dual transistors)

isc N-Channel MOSFET Transistor

• FEATURES • With TO-247 packaging • With low gate drive requirements • Low switching loss • Low on-state resistance • Easy to drive • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

功率MOSFET 600V-700V

功率MOSFET 600V-700V

包装：卷带（TR） 描述：TRANS GP NPN 120V 5 PIN 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个