20V P-Channel Enhancement Mode MOSFET

Features • RDS(ON) ≦ 110mΩ@VGS =-4.5V • RDS(ON) ≦ 150mΩ@VGS =-2.5V • Super high density cell design for extremely low RDS(ON) • In compliance with EU RoHS 2002/95/EC directives. • Suffix -H indicates Halogen-free part, ex.FMS2301-H. Case : Molded plastic, SOT-23

P-Channel SMD MOSFET

Features • Suffix -H indicates Halogen-free part, ex.FMS2301A-H. • RDS(ON) ≦ 75mΩ@VGS =-4.5V • RDS(ON) ≦ 95mΩ@VGS =-2.5V • Super high density cell design for extremely low RDS(ON) • In compliance with EU RoHS 2002/95/EC directives. • Exceptional on-resistance and maximum DC current capabilit

Mosfets

Silicon NPN Transistor High Voltage Horizontal Output

Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: • Collector–Emitter Voltage: VCEX = 1500V • Glassivated Base–Collector Junction • Safe Operating Area @ 50µs = 20A, 400V • Switchin

Reflective Photosensor

文件：49.97 Kbytes Page：2 Pages

PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications

文件：225.65 Kbytes Page：14 Pages

PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications

文件：225.65 Kbytes Page：14 Pages

EXCALIBUR 3-STATE-OUTPUT WIDE-BANDWIDTH POWER OPERATIONAL AMPLIFIER

文件：324.91 Kbytes Page：22 Pages