20VP-ChannelEnhancementModeMOSFET

Features •RDS(ON)≦110mΩ@VGS=-4.5V •RDS(ON)≦150mΩ@VGS=-2.5V •SuperhighdensitycelldesignforextremelylowRDS(ON) •IncompliancewithEURoHS2002/95/ECdirectives. •Suffix-HindicatesHalogen-freepart,ex.FMS2301-H. Case:Moldedplastic,SOT-23

P-ChannelSMDMOSFET

Features •Suffix-HindicatesHalogen-freepart,ex.FMS2301A-H. •RDS(ON)≦75mΩ@VGS=-4.5V •RDS(ON)≦95mΩ@VGS=-2.5V •SuperhighdensitycelldesignforextremelylowRDS(ON) •IncompliancewithEURoHS2002/95/ECdirectives. •Exceptionalon-resistanceandmaximumDCcurrentcapabilit

Vibratinglevelswitch

ThedeviceType8110isafillinglevelswitchforliquids,usingatuningforkasthe sensorelement. Itisdesignedforindustrialuseinallareasofprocesstechnologyandcanbeused inliquids.Typicalapplicationsareoverfloworrun-dryprotection. Thesmalltuningfork(40mminlengt

1.5Watt-20Volts,ClassCMicrowave2300MHz

GENERALDESCRIPTION The2301isaCOMMONBASEtransistorcapableofproviding1.5WattsClassC,RFoutputpowerat2300MHz.Goldmetalizationanddiffusedballastingareusedtoprovidehighreliabilityandsupremeruggedness.ThetransistorusesafullyhermeticHighTemperatureSolderSealed

SOT-23Plastic-EncapsulateMOSFETS

文件：5.03147 Mbytes Page：5 Pages

-2.8A竊?20VP-CHANNELMOSFET

文件：111.41 Kbytes Page：4 Pages

10VP-ChannelEnhancedMOSFET

文件：171.02 Kbytes Page：3 Pages