Silicon Diode

Description The FMN-1106S is a fast recovery diode of 600 V / 10 A, and has a low forward voltage drop characteristic. The maximum trr of 100 ns is realized by optimizing a life-time control. Features ● VRM------------------------------------------------------ 600 V ● IF(AV)-------------------

Silicon Diode

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封装/外壳：TO-220-2 整包 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 600V 10A TO220F 分立半导体产品 二极管 - 整流器 - 单

超高速整流二极管

200 V - 1,000 V Single Phase Bridge

[VOLTAGE MULTIPLIERS INC.] 200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge

200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery )Time

200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time

1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time

1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time