丝印代码：720；SILICON POWER (SWITCHING) TRANSISTORS

FEATURES * 625mW POWER DISSIPATION * IC CONT 2.5A * IC Up To 10A Peak Pulse Current * Excellent hfe Characteristics Up To 10A (pulsed) * Extremely Low Saturation Voltage E.g. 10mV Typ. * Exhibits extremely low equivalent on-resistance; RCE(sat)

SOT23 PNP SILICON POWER (SWITCHING) TRANSISTORS

Features • BVCEO > -100V • IC = -1A High Continuous Collector Current • ICM= -2.5A Peak Pulse Current • Low Saturation Voltage VCE(sat)

SOT23 PNP SILICON POWER (SWITCHING) TRANSISTORS

Features • BVCEO > -12V • IC = -2.5A Continuous Collector Current • ICM = -10A Peak Pulse Current • Low Saturation Voltage E.g. -17mV Max @ IC = -100mA. • RCE(sat) = 72mΩ at 2.5A for a low equivalent on-resistance • 625mW power dissipation • hFE characterised up to -10A for high current gai

Switching Transistor

■ Features ● Switching transistor ● Extremely low saturation voltage ● Complementary NPN type: FMMT619

丝印代码：720；SOT-23 Plastic-Encapsulate Transistors

FEATURE Switching transistor Extremely low saturation voltage Complementary NPN type: FMMT619 APPLICATION Gate Driving MOSFETs and IGBTs DC-DC converters Charging circuit Power switches

晶体三极管

小信号双极型晶体管

晶体管

SOT23 PNP SILICON POWER (SWITCHING) TRANSISTORS

Features • BVCEO > -100V • IC = -1A High Continuous Collector Current • ICM= -2.5A Peak Pulse Current • Low Saturation Voltage VCE(sat)

PNP Transistors

文件：966.67 Kbytes Page：2 Pages

40V PNP SILICON LOW SATURATION TRANSISTOR IN SOT23

文件：583.57 Kbytes Page：7 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 40V 1.5A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 40V 1.5A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Schottky barrier diode

DESCRIPTION Planar Schottky barrier diode with an integrated guard ring for stress protection in a small SOT23 plastic SMD package. FEATURES • Ultra high switching speed • Low forward voltage • Guard ring protected • Small plastic SMD package. APPLICATIONS • Ultra high-speed switching • V

NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FEATURES * High breakdown and low saturation voltages APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies

NPN high-voltage transistors

DESCRIPTION NPN transistors in a SOT223 plastic package. PNP complement: BF723. FEATURES • Low feedback capacitance. APPLICATIONS • Class-B video output stages of colour television receivers • General purpose high voltage circuits.

Phase Control SCR (450-550 Amperes 2400 Volts)

Phase Control SCR 450-550 Amperes 2400 Volts Applications □ Power Supplies □ Battery Changers □ Motor Control □ VAR Generators

General Purpose Rectifier (600-1200 Amperes Average 4400 Volts)

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