NPN SILICON POWER (SWITCHING) TRANSISTORS

FEATURES * 625mW POWER DISSIPATION * IC CONT 3A * 12A Peak Pulse Current * Excellent HFE Characteristics Up To 12A (pulsed) * Extremely Low Saturation Voltage E.g. 8mV Typ. * Extremely Low Equivalent On Resistance; RCE(sat)

SOT23 NPN SILICON POWER

Features • BVCEO > 15V • IC = 3A high Continuous Collector Current • ICM = 12A Peak Pulse Current • RCE(sat) = 50mΩ for a low equivalent On-Resistance • 625mW Power dissipation • hFE specified up to 12A for high current gain hold up • Complementary PNP Type: FMMT717 • Totally Lead-Free &am

NPN Transistors

■ Features ● Collector Current Capability IC=2A ● Collector Emitter Voltage VCEO=50V ● Complementary to FMMT720

NPN, 50V, 2A, SOT23

通用三极管

Transistor

50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23

Features • BVCEO > 50V • IC = 2A Continuous Collector Current • 625mW power dissipation • Low Saturation Voltage VCE(sat)

50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23

Features • BVCEO > 50V • IC = 2A Continuous Collector Current • 625mW power dissipation • Low Saturation Voltage VCE(sat)

50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23

文件：228.17 Kbytes Page：7 Pages

50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23

文件：162.19 Kbytes Page：7 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：SS LOW SAT TRANSISTOR SOT23 T\u0026R 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS NPN 50V 2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23

文件：162.19 Kbytes Page：7 Pages

50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23

文件：162.19 Kbytes Page：7 Pages

CMOS -5 V/ 5V 4 OHM SINGLE SPDT SWITCHES

GENERAL DESCRIPTION The ADG619/ADG620 are monolithic, CMOS single-pole double-throw (SPDT) switches. Each switch conducts equally well in both directions when the device is on. FEATURES 6.5 Ω (maximum) on resistance 0.8 Ω (maximum) on-resistance flatness 2.7 V to 5.5 V single

CMOS -5 V/ 5V 4 OHM SINGLE SPDT SWITCHES

GENERAL DESCRIPTION The ADG619/ADG620 are monolithic, CMOS single-pole double-throw (SPDT) switches. Each switch conducts equally well in both directions when the device is on. FEATURES 6.5 Ω (maximum) on resistance 0.8 Ω (maximum) on-resistance flatness 2.7 V to 5.5 V single

SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR

文件：1.65281 Mbytes Page：3 Pages

Single & Dual Output, 6W Ultra-Wide Input Range DC/DC Converters

文件：193.6 Kbytes Page：2 Pages

CMOS, 짹5 V/5 V, 4 廓, Single SPDT Switches

文件：365.37 Kbytes Page：16 Pages