丝印代码：619；NPN SILICON POWER (SWITCHING) TRANSISTORS

FEATURES * 625mW POWER DISSIPATION * IC CONT 3A * 12A Peak Pulse Current * Excellent HFE Characteristics Up To 12A (pulsed) * Extremely Low Saturation Voltage E.g. 8mV Typ. * Extremely Low Equivalent On Resistance; RCE(sat)

丝印代码：619；SOT23 NPN SILICON POWER

Features • BVCEO > 15V • IC = 3A high Continuous Collector Current • ICM = 12A Peak Pulse Current • RCE(sat) = 50mΩ for a low equivalent On-Resistance • 625mW Power dissipation • hFE specified up to 12A for high current gain hold up • Complementary PNP Type: FMMT717 • Totally Lead-Free &am

丝印代码：619；NPN Transistors

■ Features ● Collector Current Capability IC=2A ● Collector Emitter Voltage VCEO=50V ● Complementary to FMMT720

NPN小信号三极管

Bipolar Transistor

晶体管

General Purpose Transistor

Features - Low saturation voltage.

50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23

Features • BVCEO > 50V • IC = 2A Continuous Collector Current • 625mW power dissipation • Low Saturation Voltage VCE(sat)

50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23

Features • BVCEO > 50V • IC = 2A Continuous Collector Current • 625mW power dissipation • Low Saturation Voltage VCE(sat)

50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23

文件：228.17 Kbytes Page：7 Pages

50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23

文件：162.19 Kbytes Page：7 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：SS LOW SAT TRANSISTOR SOT23 T\u0026R 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS NPN 50V 2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23

文件：162.19 Kbytes Page：7 Pages

50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23

文件：162.19 Kbytes Page：7 Pages

NPN SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 2W POWER DISSIPATION * 6A PEAK PULSE CURRENT * EXCELLENT hFE CHARACTERISTICS UP TO 6 Amps * EXTREMELY LOW SATURATION VOLTAGE e.g. 13mV typ. * EXTREMELY LOW EQUIVALENT ON-RESISTANCE; * RCE(sat) 87mΩ at 2.75A COMPLIMENTARY TYPE - FCX720 PARTMARKING DETAIL - 619

NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR

FEATURES Very low equivalent on-resistance; RCE(sat)=160mΩ at 1.25A

Silicon Rectifier, Ultra Fast

Description: The NTE619 is a silicon rectifier designed for use in switching power supplies, inverters and as a free wheeling diode. Features: ● Ultra Fast 50ns Recovery Time ● Low Forward Drop ● Low Leakage Current ● High Temperature Glass Passivated Junction

DC-DC CONVERTER REGULATED 5V CHARGE PUMP

DESCRIPTION The ST619LB is a step-up charge pump DC-DC converter which delivers a regulated 5V ±4 output at 30mA and over temperature. The input voltage range is 2V to 3.6V (two battery cells). It requires only four external capacitor: two 0.22µF flying capacitors, and 10µF capacitors at the inpu

DC-DC CONVERTER REGULATED 5V CHARGE PUMP

DESCRIPTION The ST619LB is a step-up charge pump DC-DC converter which delivers a regulated 5V ±4 output at 30mA and over temperature. The input voltage range is 2V to 3.6V (two battery cells). It requires only four external capacitor: two 0.22µF flying capacitors, and 10µF capacitors at the inpu