NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR

FEATURES Very low equivalent on-resistance; RCE(sat)=160mΩ at 1.25A

SOT23 NPN SILICON PLANAR HIGH GAIN

Features • BVCEO > 50V • IC = 1.25A Continuous Collector Current • 500mW Power Dissipation • Low Saturation Voltage VCE(sat)

Medium Power Transistor

Features ● Very low equivalent on-resistance;RCE(sat)=160mÙ at 1.25A.

NPN, 50V, 1.25A, SOT23

SOT23 NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR

文件：77.57 Kbytes Page：3 Pages

SOT23 NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR

文件：77.57 Kbytes Page：3 Pages

50V NPN LOW SATURATION TRANSISTOR IN SOT23

文件：802.19 Kbytes Page：7 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 50V 1.25A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SOT23 NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR

文件：84.02 Kbytes Page：3 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS NPN 50V 1.25A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

CMOS -5 V/ 5V 4 OHM SINGLE SPDT SWITCHES

GENERAL DESCRIPTION The ADG619/ADG620 are monolithic, CMOS single-pole double-throw (SPDT) switches. Each switch conducts equally well in both directions when the device is on. FEATURES 6.5 Ω (maximum) on resistance 0.8 Ω (maximum) on-resistance flatness 2.7 V to 5.5 V single

CMOS -5 V/ 5V 4 OHM SINGLE SPDT SWITCHES

GENERAL DESCRIPTION The ADG619/ADG620 are monolithic, CMOS single-pole double-throw (SPDT) switches. Each switch conducts equally well in both directions when the device is on. FEATURES 6.5 Ω (maximum) on resistance 0.8 Ω (maximum) on-resistance flatness 2.7 V to 5.5 V single

SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR

文件：1.65281 Mbytes Page：3 Pages

Single & Dual Output, 6W Ultra-Wide Input Range DC/DC Converters

文件：193.6 Kbytes Page：2 Pages

CMOS, 짹5 V/5 V, 4 廓, Single SPDT Switches

文件：365.37 Kbytes Page：16 Pages