丝印代码：549；PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * Low equivalent on-resistance; RCE(sat) 250mΩ at 1A * 1 Amp continuous current

PNP Low Saturation Transistor

Features • ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continous. • Sourced from process PB.

丝印代码：549；PNP Low-Saturation Transistor

Features • This device is designed with high-current gain and low-saturation voltage with collector currents up to 2 A continuous. • Sourced from process PB.

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

Features and Benefits • BVCEO > -30V • Maximum Continuous Collector Current IC = -1A • 500mW power dissipation • Complementary type: o FMMT549 – FMMT449 o FMMT549A – N/A • Lead Free, RoHS Compliant (Note 1) • Halogen and Antimony Free Green Device (Note 2) • Qualified to AEC-Q101

30V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23

Features and Benefits • BVCEO > -30V • Maximum Continuous Collector Current IC = -1A • 500mW power dissipation • Complementary type: o FMMT549 – FMMT449 o FMMT549A – N/A • Lead Free, RoHS Compliant (Note 1) • Halogen and Antimony Free Green Device (Note 2) • Qualified to AEC-Q101

Medium Power Transistor

Features ● Low equivalent on-resistance.

PNP低饱和晶体管

•此器件设计为具有高电流增益和低饱和电压，且集电极电流最高可达2A连续值。\n•采用工艺PB设计。;

普通三极管

PNP, 30V, 1A, SOT23

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 30V 1A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP Low Saturation Transistor

文件：151.06 Kbytes Page：5 Pages

PNP Low-Saturation Transistor

Features • This device is designed with high-current gain and low-saturation voltage with collector currents up to 2 A continuous. • Sourced from process PB.

丝印代码：59A；PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * Low equivalent on-resistance; RCE(sat) 250mΩ at 1A * 1 Amp continuous current

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

Features and Benefits • BVCEO > -30V • Maximum Continuous Collector Current IC = -1A • 500mW power dissipation • Complementary type: o FMMT549 – FMMT449 o FMMT549A – N/A • Lead Free, RoHS Compliant (Note 1) • Halogen and Antimony Free Green Device (Note 2) • Qualified to AEC-Q101

Medium Power Transistor

Features ● Low equivalent on-resistance.

30V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23

Features and Benefits • BVCEO > -30V • Maximum Continuous Collector Current IC = -1A • 500mW power dissipation • Complementary type: o FMMT549 – FMMT449 o FMMT549A – N/A • Lead Free, RoHS Compliant (Note 1) • Halogen and Antimony Free Green Device (Note 2) • Qualified to AEC-Q101

30V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23

Features and Benefits • BVCEO > -30V • Maximum Continuous Collector Current IC = -1A • 500mW power dissipation • Complementary type: o FMMT549 – FMMT449 o FMMT549A – N/A • Lead Free, RoHS Compliant (Note 1) • Halogen and Antimony Free Green Device (Note 2) • Qualified to AEC-Q101

30V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23

Features and Benefits • BVCEO > -30V • Maximum Continuous Collector Current IC = -1A • 500mW power dissipation • Complementary type: o FMMT549 – FMMT449 o FMMT549A – N/A • Lead Free, RoHS Compliant (Note 1) • Halogen and Antimony Free Green Device (Note 2) • Qualified to AEC-Q101

PNP Low Saturation Transistor

文件：151.06 Kbytes Page：5 Pages

30V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23

文件：225.44 Kbytes Page：5 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PNP 30V 1A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN general purpose transistors

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC559 and BC560. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise stages in audio frequency equipment.

Low Noise Transistors

Low Noise Transistors NPN Silicon

NPN general purpose transistors

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC559 and BC560. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise stages in audio frequency equipment.

NPN general purpose transistors

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: JC559 and JC560. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification • Low noise stages in tape recorders, hi-fi amplifiers and other audio-

NPN general purpose transistors

DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: JC559 and JC560. FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification • Low noise stages in tape recorders, hi-fi amplifiers and other audio-