PNP Low Saturation Transistor

Features • ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continous. • Sourced from process PB.

Medium Power Transistor

Features ● Low equivalent on-resistance.

30V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23

Features and Benefits • BVCEO > -30V • Maximum Continuous Collector Current IC = -1A • 500mW power dissipation • Complementary type: o FMMT549 – FMMT449 o FMMT549A – N/A • Lead Free, RoHS Compliant (Note 1) • Halogen and Antimony Free Green Device (Note 2) • Qualified to AEC-Q101

PNP Low-Saturation Transistor

Features • This device is designed with high-current gain and low-saturation voltage with collector currents up to 2 A continuous. • Sourced from process PB.

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

Features and Benefits • BVCEO > -30V • Maximum Continuous Collector Current IC = -1A • 500mW power dissipation • Complementary type: o FMMT549 – FMMT449 o FMMT549A – N/A • Lead Free, RoHS Compliant (Note 1) • Halogen and Antimony Free Green Device (Note 2) • Qualified to AEC-Q101

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * Low equivalent on-resistance; RCE(sat) 250mΩ at 1A * 1 Amp continuous current

PNP Low Saturation Transistor

文件：151.06 Kbytes Page：5 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 30V 1A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

普通三极管

PNP, 30V, 1A, SOT23

PNP低饱和晶体管

SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

Features and Benefits • BVCEO > -30V • Maximum Continuous Collector Current IC = -1A • 500mW power dissipation • Complementary type: o FMMT549 – FMMT449 o FMMT549A – N/A • Lead Free, RoHS Compliant (Note 1) • Halogen and Antimony Free Green Device (Note 2) • Qualified to AEC-Q101

Medium Power Transistor

Features ● Low equivalent on-resistance.

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * Low equivalent on-resistance; RCE(sat) 250mΩ at 1A * 1 Amp continuous current

30V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23

Features and Benefits • BVCEO > -30V • Maximum Continuous Collector Current IC = -1A • 500mW power dissipation • Complementary type: o FMMT549 – FMMT449 o FMMT549A – N/A • Lead Free, RoHS Compliant (Note 1) • Halogen and Antimony Free Green Device (Note 2) • Qualified to AEC-Q101

30V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23

Features and Benefits • BVCEO > -30V • Maximum Continuous Collector Current IC = -1A • 500mW power dissipation • Complementary type: o FMMT549 – FMMT449 o FMMT549A – N/A • Lead Free, RoHS Compliant (Note 1) • Halogen and Antimony Free Green Device (Note 2) • Qualified to AEC-Q101

30V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23

Features and Benefits • BVCEO > -30V • Maximum Continuous Collector Current IC = -1A • 500mW power dissipation • Complementary type: o FMMT549 – FMMT449 o FMMT549A – N/A • Lead Free, RoHS Compliant (Note 1) • Halogen and Antimony Free Green Device (Note 2) • Qualified to AEC-Q101

PNP Low Saturation Transistor

文件：151.06 Kbytes Page：5 Pages

30V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23

文件：225.44 Kbytes Page：5 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PNP 30V 1A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Ultralow Input Bias Current Operational Amplifier

FEATURES Ultralow input bias current 60 fA maximum (AD549L) 100 fA maximum (AD549K) 250 fA maximum (AD549J) Input bias current guaranteed over the common-mode voltage range Low offset voltage 0.50 mV maximum (AD549K) 1.00 mV maximum (AD549J) Low offset drift 15 μV/°C maximum (AD549K) 20 μ

Ultralow Input Bias Current Operational Amplifier

GENERAL DESCRIPTION The AD5491 is a monolithic electrometer operational amplifier with very low input bias current. Input offset voltage and input offset voltage drift are laser trimmed for precision performance. The ultralow input current of the part is achieved with Topgate™ JFET technology, a

Ultralow Input Bias Current Operational Amplifier

GENERAL DESCRIPTION The AD5491 is a monolithic electrometer operational amplifier with very low input bias current. Input offset voltage and input offset voltage drift are laser trimmed for precision performance. The ultralow input current of the part is achieved with Topgate™ JFET technology, a

Ultralow Input Bias Current Operational Amplifier

文件：1.22293 Mbytes Page：19 Pages

Ultralow Input Bias Current Operational Amplifier

文件：1.22613 Mbytes Page：20 Pages