NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FEATURES * Very low equivalent on-resistance; RCE(sat) 175mΩ at 1A

SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

Features • BVCEO > 30V • IC = 1A high Continuous Collector Current • ICM Up to 4A Peak Pulse Current • Excellent hFE Characteristics Up To 4A • RSAT = 175mΩ @ 1A for a Low Equivalent On-Resistance • Low Saturation Voltage

Medium Power Transistor

Features ● Very low equivalent on-resistance

SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

Features • BVCEO > 30V • IC = 1A high Continuous Collector Current • ICM Up to 4A Peak Pulse Current • Excellent hFE Characteristics Up To 4A • RSAT = 175mΩ @ 1A for a Low Equivalent On-Resistance • Low Saturation Voltage

NPN, 30V, 1A, SOT23

SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

Features • BVCEO > 30V • IC = 1A high Continuous Collector Current • ICM Up to 4A Peak Pulse Current • Excellent hFE Characteristics Up To 4A • RSAT = 175mΩ @ 1A for a Low Equivalent On-Resistance • Low Saturation Voltage

30V NPN MEDIUM POWER TRANSISTOR IN SOT23

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封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 30V 1A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS NPN 30V 1A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ROUND INSTRUMENTATION HANDLES

[KEYSTONE] ROUND INSTRUMENTATION HANDLES FERRULES HANDLE MOUNTING SCREWS

Resin-Coated, Radial-Lead Solid Tantalum Capacitors

FEATURES • Terminations: standard SnPb,    100 tin available • Large capacitance range • Encapsulated in a hard orange epoxy resin • Large variety of lead styles available • Supplied on tape and reel or ammopack • Low impedance and ESR at high frequencies • Material categorization: for d

PECL Output

文件：145.59 Kbytes Page：2 Pages

Resin-Coated, Radial-Lead Solid Tantalum Capacitors

文件：129.21 Kbytes Page：10 Pages

Resin-Coated, Radial-Lead Solid Tantalum Capacitors

文件：119.72 Kbytes Page：9 Pages