PNP Epitaxial Silicon Transistor

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256Mb F-die DDR SDRAM Specification

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封装/外壳：SOT-23-6 细型，TSOT-23-6 包装：散装 描述：TRANS PNP 45V 0.5A SUPERSOT-6 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP Epitaxial Silicon Transistor

857 Series High Temp Card Edge Connector | Black | 0.156 (3.96mm) Pitch | 0.200 (5.08mm) Row Spacing | Low Profile Insulator

Features 0.156 (3.96mm) Contact Spacing by 0.200 (5.08mm) Row Spacing Accepts .062 (1.57mm) Nominal Thickness P.C. Board Low Profile Insulator Body, 0.473 (12.01mm) Contact Termination Options include P.C. Tail, Wire Hole, Wire Wrap, 90 and Extender Board Bends Single or Dual Row Configuratio

General Purpose Transistor

Features - Low current (max. 100mA). - Low voltage. - AEC-Q101 Qualified.

General Purpose Transistor

Features - For AF input stages and driver applications. - High current gain. - Low collector-emitter saturation voltage. - Low noise between 30Hz and 15kHz. - AEC-Q101 Qualified.

General Purpose Transistor

Features - Low current (max. 100mA). - Low voltage. - AEC-Q101 Qualified.

boxes and ancillary products

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