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FMB价格
参考价格：￥1.4470
型号：FMB-1 品牌：Richco 备注：这里有FMB多少钱，2025年最近7天走势，今日出价，今日竞价，FMB批发/采购报价，FMB行情走势销售排行榜，FMB报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FMB | CERAMIC SEAM SEALED SMD CRYSTAL 文件：87.02 Kbytes Page：1 Pages | FOX Fox Electronics |  |   |
SEMICONDUCTOR PACKAGE DIMENSION PACKAGEDIMENSION | KECKEC CORPORATION KEC株式会社 |  | | |
SEMICONDUCTOR PACKAGE DIMENSION PACKAGEDIMENSION | KECKEC CORPORATION KEC株式会社 | | | |
Timers Multifunction Type FMB01 ProductDescription Multifunctiontimerwith7functionsandselectabletimerangefrom0.05secondsto300hours.48x48mmforfrontpanelmountingandon11-pinsocket. •Timerange0.05sto300h •Knobselectionoftimerange •Knobadjustabletimesetting •Knobselectionofoperating | CARLOGAVAZZI Carlo Gavazzi Holding AG |  | | |
1-line Bi-directional TVS Diode Features BidirectionalTransilFunctions LowClampingVoltage CompliancewithIEC61000-4-2(ESD)immunitytest AirDischarge:±20kV ContactDischarge:±15kV MainApplications Digitalcamera DigitalTVandvideos Notebookcomputers | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 |  | | |
1-Line Bi-directional TVS Diode Features Forsurfacemountedapplications Low-profilepackagesuitedforautomoticinstalled Transientprotectionfordatalines CompliancewithIEC61000-4-2(ESD)immunitytest AirDischarge:±20kV ContactDischarge:±15kV MainApplications Useinsensitiveelectronicsprotect | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | | | |
Bi-directional TVS Diode Array Features BidirectionalTransilFunctions LowClampingVoltage CompliancewithIEC61000-4-2(ESD)immunitytest AirDischarge:±18kV ContactDischarge:±12kV MainApplications Digitalcamera DigitalTVandvideos Notebookcomputers | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIFMB075isDesignedfor FEATURES: ●Omnigold™MetalizationSystem | ASI Advanced Semiconductor |  | | |
NPN Multi-Chip General Purpose Amplifier NPNMulti-ChipGeneralPurposeAmplifier Thisdeviceisdesignedforgeneralpurposeamplifierapplicationsatcollector currentsto300mA.SourcedfromProcess10. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package Thisdualcomplementarydevicewasdesignedforuseasageneralpurposeamplifierapplicationsatcollectorcurrentsto300mA.SourcedfromProcess10(NPN)andProcess68(PNP). | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
1A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 100 to 1000 V Forward Current - 1A ReverseVoltage-100to1000V ForwardCurrent-1A FEATURES ♦Highcurrentcapability ♦Lowforwardvoltagedrop ♦GlassPassivatedChipJunction ♦Lowpowerloss,highefficiency ♦LeadfreeincomplywithEURoHS2011/65/EUdirectives | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 |  | | |
1A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 100 to 1000 V Forward Current - 1A ReverseVoltage-100to1000V ForwardCurrent-1A FEATURES ◆Highcurrentcapability ◆Lowforwardvoltagedrop ◆GlassPassivatedChipJunction ◆Lowpowerloss,highefficiency ◆LeadfreeincomplywithEURoHS2011/65/EUdirectives | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIFMB150isDesignedfor FEATURES: •Omnigold™MetalizationSystem | ASI Advanced Semiconductor | | | |
NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIFMB175isDesignedforClassC,FMBroadcastApplicationsupto108MHz. FEATURES: •ClassCOperation •PG=10dBat175W/108MHz •Omnigold™MetalizationSystem | ASI Advanced Semiconductor | | | |
1A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 100 to 1000 V Forward Current - 1A ReverseVoltage-100to1000V ForwardCurrent-1A FEATURES ♦Highcurrentcapability ♦Lowforwardvoltagedrop ♦GlassPassivatedChipJunction ♦Lowpowerloss,highefficiency ♦LeadfreeincomplywithEURoHS2011/65/EUdirectives | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | | | |
1A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 100 to 1000 V Forward Current - 1A ReverseVoltage-100to1000V ForwardCurrent-1A FEATURES ◆Highcurrentcapability ◆Lowforwardvoltagedrop ◆GlassPassivatedChipJunction ◆Lowpowerloss,highefficiency ◆LeadfreeincomplywithEURoHS2011/65/EUdirectives | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | | | |
PNP Multi-Chip General Purpose Amplifier PNPMulti-ChipGeneralPurposeAmplifier Thisdeviceisdesignedforgeneralpurposeamplifierapplicationsatcollectorcurrentsto300mA.SourcedfromProcess68. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Schottky Barrier Diodes Scope ThepresentspecificationsshallapplytoanFMW-24H. Outline HighFrequencyRectification TypeSiliconSchottkyBarrierDiode StructureResinMolded ApplicationsHighFrequencyRectification Flammability UL94V-0(Equivalent) | SankenSanken electric 三垦三垦电气株式会社 |  | | |
NPN & PNP General Purpose Amplifier NPN&PNPGeneralPurposeAmplifier Thiscomplementarydeviceisforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.SourcedfromProcess19and63.SeeFFB2222A(NPN)andFFB2907A(PNP)forcharacteristics. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package NPN&PNPComplementaryDualTransistor SuperSOT-6SurfaceMountPackage Thiscomplementarydualdevicewasdesignedforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto300mA.SourcedfromPr19(NPN)andPr63(PNP). | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Schottky Barrier Diodes 20V SchottkyBarrierDiodes20V | SankenSanken electric 三垦三垦电气株式会社 | | | |
Schottky Barrier Diodes 20V SchottkyBarrierDiodes20V | SankenSanken electric 三垦三垦电气株式会社 | | | |
Schottky Barrier Diodes Scope ThepresentspecificationsshallapplytoanFMW-24H. Outline HighFrequencyRectification TypeSiliconSchottkyBarrierDiode StructureResinMolded ApplicationsHighFrequencyRectification Flammability UL94V-0(Equivalent) | SankenSanken electric 三垦三垦电气株式会社 | | | |
Schottky Barrier Diodes 40V Scope ThepresentspecificationsshallapplytoanFMB-24. Outline TypeSiliconSchottkyBarrierDiode StructureResinMolded ApplicationsHighFrequencyRectification Flammability UL94V-0(Equivalent) | SankenSanken electric 三垦三垦电气株式会社 | | | |
Schottky Barrier Diodes Scope ThepresentspecificationsshallapplytoanFMW-24H. Outline HighFrequencyRectification TypeSiliconSchottkyBarrierDiode StructureResinMolded ApplicationsHighFrequencyRectification Flammability UL94V-0(Equivalent) | SankenSanken electric 三垦三垦电气株式会社 | | | |
Schottky Barrier Diodes Scope ThepresentspecificationsshallapplytoanFMW-24H. Outline HighFrequencyRectification TypeSiliconSchottkyBarrierDiode StructureResinMolded ApplicationsHighFrequencyRectification Flammability UL94V-0(Equivalent) | SankenSanken electric 三垦三垦电气株式会社 | | | |
Schottky Barrier Diodes 40V Scope ThepresentspecificationsshallapplytoanFMB-24. Outline TypeSiliconSchottkyBarrierDiode StructureResinMolded ApplicationsHighFrequencyRectification Flammability UL94V-0(Equivalent) | SankenSanken electric 三垦三垦电气株式会社 | | | |
Schottky Barrier Diodes Scope ThepresentspecificationsshallapplytoanFMW-24H. Outline HighFrequencyRectification TypeSiliconSchottkyBarrierDiode StructureResinMolded ApplicationsHighFrequencyRectification Flammability UL94V-0(Equivalent) | SankenSanken electric 三垦三垦电气株式会社 | | | |
Schottky Barrier Diodes 40V Scope ThepresentspecificationsshallapplytoanFMB-24. Outline TypeSiliconSchottkyBarrierDiode StructureResinMolded ApplicationsHighFrequencyRectification Flammability UL94V-0(Equivalent) | SankenSanken electric 三垦三垦电气株式会社 | | | |
Schottky Barrier Diodes Scope ThepresentspecificationsshallapplytoanFMW-24H. Outline HighFrequencyRectification TypeSiliconSchottkyBarrierDiode StructureResinMolded ApplicationsHighFrequencyRectification Flammability UL94V-0(Equivalent) | SankenSanken electric 三垦三垦电气株式会社 | | | |
Schottky Barrier Diodes 40V Scope ThepresentspecificationsshallapplytoanFMB-24. Outline TypeSiliconSchottkyBarrierDiode StructureResinMolded ApplicationsHighFrequencyRectification Flammability UL94V-0(Equivalent) | SankenSanken electric 三垦三垦电气株式会社 | | | |
Schottky Barrier Diodes Scope ThepresentspecificationsshallapplytoanFMW-24H. Outline HighFrequencyRectification TypeSiliconSchottkyBarrierDiode StructureResinMolded ApplicationsHighFrequencyRectification Flammability UL94V-0(Equivalent) | SankenSanken electric 三垦三垦电气株式会社 | | | |
PNP Multi-Chip General Purpose Amplifier PNPMulti-ChipGeneralPurposeAmplifier Thisdeviceisdesignedforuseasageneralpurposeamplifierandswitchrequiring collectorcurrentsto500mA.SourcedfromProcess63. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Silicon Schottky Barrier Diode Scope ThepresentspecificationsshallapplytoanFMB-29L. Outline TypeSiliconSchottkyBarrierDiode StructureResinMolded ApplicationsHighFrequencyRectification Flammability UL94V-0(Equivalent) | SankenSanken electric 三垦三垦电气株式会社 | | | |
1A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 100 to 1000 V Forward Current - 1A ReverseVoltage-100to1000V ForwardCurrent-1A FEATURES ♦Highcurrentcapability ♦Lowforwardvoltagedrop ♦GlassPassivatedChipJunction ♦Lowpowerloss,highefficiency ♦LeadfreeincomplywithEURoHS2011/65/EUdirectives | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | | | |
1A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 100 to 1000 V Forward Current - 1A ReverseVoltage-100to1000V ForwardCurrent-1A FEATURES ◆Highcurrentcapability ◆Lowforwardvoltagedrop ◆GlassPassivatedChipJunction ◆Lowpowerloss,highefficiency ◆LeadfreeincomplywithEURoHS2011/65/EUdirectives | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | | | |
Schottky Barrier Diodes 20V SchottkyBarrierDiodes20V | SankenSanken electric 三垦三垦电气株式会社 | | | |
Schottky Barrier Diodes 20V SchottkyBarrierDiodes20V | SankenSanken electric 三垦三垦电气株式会社 | | | |
Schottky Barrier Diodes 40V Scope ThepresentspecificationsshallapplytoanFMB-24. Outline TypeSiliconSchottkyBarrierDiode StructureResinMolded ApplicationsHighFrequencyRectification Flammability UL94V-0(Equivalent) | SankenSanken electric 三垦三垦电气株式会社 | | | |
Schottky Barrier Diodes Scope ThepresentspecificationsshallapplytoanFMW-24H. Outline HighFrequencyRectification TypeSiliconSchottkyBarrierDiode StructureResinMolded ApplicationsHighFrequencyRectification Flammability UL94V-0(Equivalent) | SankenSanken electric 三垦三垦电气株式会社 | | | |
Schottky Barrier Diodes 40V Scope ThepresentspecificationsshallapplytoanFMB-24. Outline TypeSiliconSchottkyBarrierDiode StructureResinMolded ApplicationsHighFrequencyRectification Flammability UL94V-0(Equivalent) | SankenSanken electric 三垦三垦电气株式会社 | | | |
Schottky Barrier Diodes Scope ThepresentspecificationsshallapplytoanFMW-24H. Outline HighFrequencyRectification TypeSiliconSchottkyBarrierDiode StructureResinMolded ApplicationsHighFrequencyRectification Flammability UL94V-0(Equivalent) | SankenSanken electric 三垦三垦电气株式会社 | | | |
Schottky Barrier Diodes Scope ThepresentspecificationsshallapplytoanFMW-24H. Outline HighFrequencyRectification TypeSiliconSchottkyBarrierDiode StructureResinMolded ApplicationsHighFrequencyRectification Flammability UL94V-0(Equivalent) | SankenSanken electric 三垦三垦电气株式会社 | | | |
Schottky Barrier Diodes 40V Scope ThepresentspecificationsshallapplytoanFMB-24. Outline TypeSiliconSchottkyBarrierDiode StructureResinMolded ApplicationsHighFrequencyRectification Flammability UL94V-0(Equivalent) | SankenSanken electric 三垦三垦电气株式会社 | | | |
NPN General Purpose Amplifier NPNMulti-ChipGeneralPurposeAmplifier Thisdeviceisdesignedasageneralpurposeamplifierandswitch. Theusefuldynamicrangeextendsto100mAasaswitchandto100MHzasanamplifier.SourcedfromProcess23. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
PNP Multi-Chip General Purpose Amplifier PNPMulti-ChipGeneralPurposeAmplifier Thisdeviceisdesignedforgeneralpurposeamplifierandswitchingapplicationsatcollectorcurrentsof10µAto100mA.SourcedfromProcess66. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
NPN & PNP General Purpose Amplifier ThiscomplementarydeviceisdesignedforuseasageneralpurposeamplifierandswitchTheusefuldynamicrangeextendsto100mAasaswitchand100MHzasanamplifier.SourcedfromProcess23and66.SeeFFB3904(NPN)andFFB3906(PNP)forcharacteristics. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package ThiscomplementarydeviceisdesignedforuseasageneralpurposeamplifierandswitchTheusefuldynamicrangeextendsto100mAasaswitchand100MHzasanamplifier.SourcedfromProcess23and66.SeeFFB3904(NPN)andFFB3906(PNP)forcharacteristics. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
1A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 100 to 1000 V Forward Current - 1A ReverseVoltage-100to1000V ForwardCurrent-1A FEATURES ♦Highcurrentcapability ♦Lowforwardvoltagedrop ♦GlassPassivatedChipJunction ♦Lowpowerloss,highefficiency ♦LeadfreeincomplywithEURoHS2011/65/EUdirectives | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | | | |
1A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 100 to 1000 V Forward Current - 1A ReverseVoltage-100to1000V ForwardCurrent-1A FEATURES ◆Highcurrentcapability ◆Lowforwardvoltagedrop ◆GlassPassivatedChipJunction ◆Lowpowerloss,highefficiency ◆LeadfreeincomplywithEURoHS2011/65/EUdirectives | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | | | |
1A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 100 to 1000 V Forward Current - 1A ReverseVoltage-100to1000V ForwardCurrent-1A FEATURES ♦Highcurrentcapability ♦Lowforwardvoltagedrop ♦GlassPassivatedChipJunction ♦Lowpowerloss,highefficiency ♦LeadfreeincomplywithEURoHS2011/65/EUdirectives | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | | | |
1A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 100 to 1000 V Forward Current - 1A ReverseVoltage-100to1000V ForwardCurrent-1A FEATURES ◆Highcurrentcapability ◆Lowforwardvoltagedrop ◆GlassPassivatedChipJunction ◆Lowpowerloss,highefficiency ◆LeadfreeincomplywithEURoHS2011/65/EUdirectives | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | | | |
1A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 100 to 1000 V Forward Current - 1A ReverseVoltage-100to1000V ForwardCurrent-1A FEATURES ♦Highcurrentcapability ♦Lowforwardvoltagedrop ♦GlassPassivatedChipJunction ♦Lowpowerloss,highefficiency ♦LeadfreeincomplywithEURoHS2011/65/EUdirectives | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | | | |
1A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 100 to 1000 V Forward Current - 1A ReverseVoltage-100to1000V ForwardCurrent-1A FEATURES ◆Highcurrentcapability ◆Lowforwardvoltagedrop ◆GlassPassivatedChipJunction ◆Lowpowerloss,highefficiency ◆LeadfreeincomplywithEURoHS2011/65/EUdirectives | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | | | |
NPN Multi-Chip General Purpose Amplifier NPNMulti-ChipGeneralPurposeAmplifier Thisdeviceisdesignedforgeneralpurposeamplifierapplicationsatcollectorcurrentsto300mA.SourcedfromProcess33. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
NPN & PNP Complementary Dual Transistor SuperSOT- 6 Surface Mount Package NPN&PNPComplementaryDualTransistorSuperSOT-6SurfaceMountPackage Thisdevicewasdesignedforgeneralpurposeamplifierapplicationsatcollectorcurrentsto300mA. SourcedfromProcess33(NPN)andProcess73(PNP). | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
NPN Multi-Chip Darlington Transistor NPNMulti-ChipDarlingtonTransistor Thisdeviceisdesignedforapplicationsrequiringextremelyhighcurrent gainatcollectorcurrentsto1.0A.SourcedfromProcess05. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
PNP Multi-Chip General Purpose Amplifier PNPMulti-ChipGeneralPurposeAmplifier Thisdeviceisdesignedforgeneralpurposeamplifierapplicationsatcollectorcurrentsto300mA.SourcedfromProcess73. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
350mW Switching Diode Peak Repetitive Peak reverse voltage VRRM 350mWSwitchingDiode | FCIFirst Components International 戈采戈采企业股份有限公司 |  | | |
350mW Switching Diode Peak Repetitive Peak reverse voltage VRRM 350mWSwitchingDiode | FCIFirst Components International 戈采戈采企业股份有限公司 | | |
FMB产品属性
- 类型
描述
- 型号
FMB
- 制造商
Carlo Gavazzi
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FOX |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
N/A |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
|||
ON/安森美 |
19+ |
TO-252 |
40 |
正规渠道原装正品 |
|||
ON/安森美 |
24+ |
SSOT-6 |
4435 |
全新原装正品现货可开票 |
|||
ON/安森美 |
23+ |
NA |
25630 |
原装正品 |
|||
FUJI |
原厂封装 |
1000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
FUJI/富士电机 |
23+ |
TO-220 |
11550 |
FUJI/富士电机系列在售 |
|||
ON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
ON/安森美 |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
SANKEN |
24+ |
TO-220 |
589 |
只做原厂渠道 可追溯货源 |
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2019-12-4
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