肖特基二极管

可低损耗整流动作的 SBD。\n选择最佳势垒金属，实现低漏电流、低导通损耗。 ・低噪声开关特性\n・低 VF\n・TO220F 型高散热封装;

30A Schottky barrier diode in TO220F package

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Schottky Barrier Diodes

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封装/外壳：TO-220-3 整包 包装：卷带（TR） 描述：DIODE ARRAY SCHOTTKY 60V TO220F 分立半导体产品 二极管 - 整流器 - 阵列

Silicon Complementary Transistors High Voltage Power Amplifier

Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: • High Collector–Emitter Sustaining Voltage: VCEO(sus) = 16

PLLatinum??Low Power Frequency Synthesizer for RF Personal Communications

文件：300.91 Kbytes Page：19 Pages

PLLatinum??Low Power Frequency Synthesizer for RF Personal Communications

文件：300.91 Kbytes Page：19 Pages

PLLatinum??Low Power Frequency Synthesizer for RF Personal Communications

文件：300.91 Kbytes Page：19 Pages

PLLatinum??Low Power Frequency Synthesizer for RF Personal Communications

文件：300.91 Kbytes Page：19 Pages