| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FKD6040 | MOSFET | FETEK 台湾东沅 |   | |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | ADPOW | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 15.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | | ||
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | ADPOW | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
东沅 |
22+ |
TO252 |
45000 |
只做原装 |
|||
FET东沅 |
24+ |
TO252-4L |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
NK/南科功率 |
2025+ |
TO252 |
986966 |
国产 |
|||
NK/南科功率 |
2511 |
TO252 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
FET |
23+ |
TO252 |
50000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
82000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
FETEK东沅 |
22+ |
N/A |
50000 |
FETEK东沅原厂渠道,支持终端生产 |
|||
FET |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
FET |
24+ |
NA/ |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FETEK东沅 |
23+ |
N/A |
45000 |
原装正品假一罚十,代理渠道价格优 |
FKD6040规格书下载地址
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DdatasheetPDF页码索引
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