HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ............................................................................... 500V ● rDS (ON) (MAX) ............................................................. 1.13Ω ● ID ........................................................................................

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=35A@ TC=25℃ ·Drain Source Voltage- : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.9mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • VDSS ................................................................................600V • rDS (ON) (MAX) .............................................................. 1.18Ω • ID .......................................................................................

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • VDSS ................................................................................600V • rDS (ON) (MAX) .............................................................. 1.18Ω • ID .......................................................................................

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.18Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................450V ● rDS (ON) (MAX) .............................................................. 0.92Ω ● ID .......................................................................................

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................450V ● rDS (ON) (MAX) .............................................................. 0.92Ω ● ID .......................................................................................

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.92Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con