型号 功能描述 生产厂家 企业 LOGO 操作

NAND GATES

DESCRIPTION The HCC4011B, HCC4012B and HCC4023B (extended temperature range) and HCF4011B, HCF4012B and HCF4023B (intermediate temperature range) are monolithic, integrated circuit, available in 14-lead dual in-line plastic or ceramic package and plastic micropackage. The HCC/HCF4011B, HCC/HCF40

STMICROELECTRONICS

意法半导体

NAND GATES

DESCRIPTION The HCC4011B, HCC4012B and HCC4023B (extended temperature range) and HCF4011B, HCF4012B and HCF4023B (intermediate temperature range) are monolithic, integrated circuit, available in 14-lead dual in-line plastic or ceramic package and plastic micropackage. The HCC/HCF4011B, HCC/HCF40

STMICROELECTRONICS

意法半导体

Dual 4-input NAND gate

DESCRIPTION The HEF4012B provides the positive dual 4-input NAND function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance.

PHILIPS

飞利浦

Dual 4-input NAND gate

DESCRIPTION The HEF4012B provides the positive dual 4-input NAND function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance.

PHILIPS

飞利浦

Dual 4-input NAND gate

DESCRIPTION The HEF4012B provides the positive dual 4-input NAND function. The outputs are fully buffered for highest noise immunity and pattern insensitivity of output impedance.

PHILIPS

飞利浦

FJX4012RTF_Q产品属性

  • 类型

    描述

  • 型号

    FJX4012RTF_Q

  • 功能描述

    开关晶体管 - 偏压电阻器 PNP Si Transistor Epitaxial

  • RoHS

  • 制造商

    ON Semiconductor

  • 晶体管极性

    NPN/PNP

  • 安装风格

    SMD/SMT

  • 封装/箱体

    直流集电极/Base Gain hfe

  • Min

    200 mA

  • 最大工作频率

    集电极—发射极最大电压

  • VCEO

    50 V

  • 集电极连续电流

    150 mA

  • 功率耗散

    200 mW

  • 封装

    Reel

更新时间:2026-3-16 18:53:02
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