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FJT1100

0.15A Low Leakage Rectifier

This Low Leakage Rectifier is packaged in DO-35 package, which has a maximum forward current of 0.15A.\n\n Available as High Reliability device per MIL-PRF-19500, indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

DIGITRON

FJT1100

Diode Switching 30V 0.15A 2-Pin DO-7

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

FJT1100

Ultra Low Leakage Diodes

ONSEMI

安森美半导体

FJT1100

Ultra Low Leakage Diodes

文件:29.06 Kbytes Page:1 Pages

FAIRCHILD

仙童半导体

FJT1100

ULTRA LOW LEAKAGE DIODES

文件:61.79 Kbytes Page:1 Pages

DIGITRON

Schottky Power Rectifier(Surface Mount Power Package)

Schottky Barrier Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suit

MOTOROLA

摩托罗拉

ULTRAFAST RECTIFIERS 1.0 AMPERE 900-1000 VOLTS

SWITCHMODE Power Rectifiers Ultrafast “E’’ Series with High Reverse Energy Capability . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • 20 mjoules Avalanche Energy Guaranteed • Excellent Prot

MOTOROLA

摩托罗拉

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

MOSPEC

统懋

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

FJT1100产品属性

  • 类型

    描述

  • Peak Reverse Repetitive Voltage:

    30V

  • Peak Reverse Current:

    0.00001@15VuA

  • Peak Forward Voltage:

    1.05@0.5AV

  • Operating Junction Temperature:

    -55 to 175°C

  • Minimum Operating Temperature:

    -55°C

  • Maximum Power Dissipation:

    250mW

  • Maximum Operating Temperature:

    175°C

  • Maximum Continuous Forward Current:

    0.15A

  • Configuration:

    Single

更新时间:2026-7-23 17:56:00
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