Ultra Low Leakage Diode

General Description An Ultra Low Leakage Diode in the DO-35 package. The forward voltage is typically greater than 0.5 volts at 1.0 micro-ampere. This product is light sensitive, any damage to the body coating will affect the reverse leakage when exposed to light.

小信号二极管

采用DO-35封装的超低泄漏二极管。 在1.0 mA条件下，正向电压通常大于0.5 V。 此产品为光敏型，本体涂层如有任何损坏，都会在接触到光线的情况下影响反向漏电。

封装/外壳：DO-204AH，DO-35，轴向 包装：管件 描述：DIODE GEN PURP 15V 150MA DO35 分立半导体产品 二极管 - 整流器 - 单

Ultra Low Leakage Diode

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N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1101, BF1101R and BF1101WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

Integrated Circuit General Purpose Amp, Mixer, and Oscillator

Features: • General Amplifier Circuit • High Frequency Amplifier • Mixer, OSC and Modulator • Video Amplifier • Recommend RF and IF Amplifier (f = 0 to 100MHz) • AGC is possible

Universal sync generator USG

GENERAL DESCRIPTION The SAA1101 is a Universal Sync Generator (USG) and is designed for application in video sources such as cameras, film scanners, video generators and associated apparatus. The circuit can be considered as a successor to the SAA1043 sync generator and the SAA1044 subcarrier cou

WIDE BAND AGC AMPLIFIER GaAs MMIC

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