High Voltage Fast Switching NPN Power Transistor

Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch Mode Power Supplies

High-Voltage Fast-Switching NPN Power Transistor

Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch-Mode Power Supplies

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO= 400V(Min.) ·High Reliability ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driv

FJB3307D: High Voltage Fast Switching NPN Power Transistor

High-Voltage Fast-Switching NPN Power Transistor

Features • Built-in Diode between Collector and Emitter • Suitable for Electronic Ballast and Switch-Mode Power Supplies

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 400V 8A D2PAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

15 kV ESD Protected, 2.7 V to 3.6 V Serial Port Transceivers with Green Idle?

GENERAL DESCRIPTION The ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E line of driver/receiver products is designed to fully meet the EIA-232 standard while operating with a single 2.7 V to 3.6 V power supply. The devices feature an on-board charge pump dc-to-dc converter, eliminating the need for

15 kV ESD Protected, 2.7 V to 3.6 V Serial Port Transceivers with Green Idle?

GENERAL DESCRIPTION The ADM3307E/ADM3310E/ADM3311E/ADM3312E/ADM3315E line of driver/receiver products is designed to fully meet the EIA-232 standard while operating with a single 2.7 V to 3.6 V power supply. The devices feature an on-board charge pump dc-to-dc converter, eliminating the need for

KR Electronics part number 3307 is a 1200 MHz lowpass filter

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