| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FIR55N03G | 场效应管 / 中压MOSFERs | FS |   | |
N-Channel Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Description: The ADM55N03Z uses advanced trench technology and design to provide excellent RDS(ON) with l | ADV 爱德微 | | ||
N?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 55mΩ ID 3.5A Pb‐Free Lead Plating & Halogen Free | EXCELLIANCE 杰力科技 | | ||
N-Channel Logic Level E nhancement Mode Field E ffect Transistor 文件：415.76 Kbytes Page：5 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
N-Channel Logic Level E nhancement Mode Field E ffect Transistor 文件：415.76 Kbytes Page：5 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
25V N-CHANNEL ENHANCEMENT-MODE MOSFET 文件：256.92 Kbytes Page：6 Pages | CHAMP 虹冠电子 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FIRST/福斯特 |
24+ |
NA/ |
50000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
First |
25+ |
TO-252 |
38 |
原装正品,假一罚十! |
|||
FIRST |
18+ |
TO-252 |
85600 |
保证进口原装可开17%增值税发票 |
|||
FIRST |
23+ |
TO-252 |
30000 |
代理全新原装现货,价格优势 |
|||
FIRST/福斯特 |
23+ |
TO251 |
28888 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
FIRST/福斯特 |
20+ |
TO-220 |
300000 |
现货很近!原厂很远!只做原装 |
|||
First |
25+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
FIRST/福斯特 |
2022+ |
TO-220 |
2000 |
原厂代理 终端免费提供样品 |
|||
FIRST/福斯特 |
24+ |
TO-252 |
60000 |
||||
FIRST/福斯特 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
FIR55N03G芯片相关品牌
FIR55N03G规格书下载地址
FIR55N03G参数引脚图相关
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DdatasheetPDF页码索引
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