3.3V LVDS 4-Bit Flow-Through High Speed Differential Driver

General Description This quad driver is designed for high speed interconnects utilizing Low Voltage Differential Signaling (LVDS) technology. The driver translates LVTTL signal levels to LVDS levels with a typical differential output swing of 350mV which provides low EMI at ultra low power dissip

3.3V LVDS 4-Bit Flow-Through

General Description This quad driver is designed for high speed interconnects utilizing Low Voltage Differential Signaling (LVDS) technology. The driver translates LVTTL signal levels to LVDS levels with a typical differential output swing of 350mV which provides low EMI at ultra low power dissip

3.3V LVDS 4-Bit Flow-Through High Speed Differential Driver

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封装/外壳：16-TSSOP（0.173"，4.40mm 宽） 包装：管件 描述：IC DRIVER 4/0 16TSSOP 集成电路（IC） 驱动器，接收器，收发器

3.3V LVDS 4-Bit Flow-Through

General Description This quad driver is designed for high speed interconnects utilizing Low Voltage Differential Signaling (LVDS) technology. The driver translates LVTTL signal levels to LVDS levels with a typical differential output swing of 350mV which provides low EMI at ultra low power dissip

封装/外壳：16-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC DRIVER 4/0 16TSSOP 集成电路（IC） 驱动器，接收器，收发器

RECORDING Y/C AMPLIFIER

Description CXA1047M is a bipolar IC developed to process the recording signals (luminance/chroma signals) of 8mm videos.

Dual-Band 3V Power Amplifier for GSM900/DCS1800 Applications

Description The CXG1047FN dual band GaAs PA is a 3-stage power amplifier that may be used for both GSM900 and DCS1800 applications. To achieve minimum die-size and package dimensions, it contains one amplifier chain with a single input and output. The PA has a single RF input for both the GSM900

NPN SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 2W POWER DISSIPATION * 20A Peak Pulse Current * Excellent HFE Characteristics up to 20 Amps * Extremely Low Saturation Voltage E.g. 25mv Typ. * Extremely Low Equivalent On-resistance; RCE(sat) 40mΩ at 4A

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * VCEO = 10V * 5 Amp Continuous Current * 20 Amp Pulse Current * Low Saturation Voltage * High Gain * Extremely Low Equivalent On-resistance; RCE(sat) = 44mΩ at 5A

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FEATURES * Very Low Saturation Voltage * High Gain * 4 Amp Continuous Current APPLICATIONS * DC-DC Convertors * Power Management - Supply Switching