3.3V LVDS 1-Bit High Speed Differential Receiver

General Description This single receiver is designed for high speed interconnects utilizing Low Voltage Differential Signaling (LVDS) technology. The receiver translates LVDS levels, with a typical differential input threshold of 100 mV, to LVTTL signal levels. LVDS provides low EMI at ultra low

3.3V LVDS 1-Bit High Speed Differential Receiver

文件：1.14464 Mbytes Page：10 Pages

3.3V LVDS 1 位高速差分接收器

3.3V LVDS 1-Bit High Speed Differential Receiver

General Description This single receiver is designed for high speed interconnects utilizing Low Voltage Differential Signaling (LVDS) technology. The receiver translates LVDS levels, with a typical differential input threshold of 100 mV, to LVTTL signal levels. LVDS provides low EMI at ultra low

3.3V LVDS 1-Bit High Speed Differential Receiver

General Description This single receiver is designed for high speed interconnects utilizing Low Voltage Differential Signaling (LVDS) technology. The receiver translates LVDS levels, with a typical differential input threshold of 100 mV, to LVTTL signal levels. LVDS provides low EMI at ultra low

3.3V LVDS 1-Bit High Speed Differential Receiver

General Description This single receiver is designed for high speed interconnects utilizing Low Voltage Differential Signaling (LVDS) technology. The receiver translates LVDS levels, with a typical differential input threshold of 100 mV, to LVTTL signal levels. LVDS provides low EMI at ultra low

3.3V LVDS 1-Bit High Speed Differential Receiver

文件：1.14464 Mbytes Page：10 Pages

3.3V LVDS 1-Bit High Speed Differential Receiver

文件：1.14464 Mbytes Page：10 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC RECEIVER 0/1 8SOIC 集成电路（IC） 驱动器，接收器，收发器

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC RECEIVER 0/1 8SOIC 集成电路（IC） 驱动器，接收器，收发器

3.3V LVDS 1-Bit High Speed Differential Receiver

文件：1.14464 Mbytes Page：10 Pages

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low-profile surface mount package • Logic level compatible A

Low-voltage dual frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1018M BICMOS device integrates prescalers, programmable dividers, and phase comparators to implement two phase-locked loops. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3