LVDS 1-Bit High Speed Differential Receiver

Description This single receiver is designed for high-speed interconnects utilizing Low Voltage Differential Signaling (LVDS) technology. The receiver translates LVDS levels, with a typical differential input threshold of 100 mV, to LVTTL signal levels. LVDS provides low EMI at ultra low power di

3.3V LVDS 1 位高速差分接收器

LVDS 1-Bit, High-Speed Differential Receiver

文件：977.42 Kbytes Page：11 Pages

LVDS 1-Bit High Speed Differential Receiver

Description This single receiver is designed for high-speed interconnects utilizing Low Voltage Differential Signaling (LVDS) technology. The receiver translates LVDS levels, with a typical differential input threshold of 100 mV, to LVTTL signal levels. LVDS provides low EMI at ultra low power di

LVDS 1-Bit High Speed Differential Receiver

Description This single receiver is designed for high-speed interconnects utilizing Low Voltage Differential Signaling (LVDS) technology. The receiver translates LVDS levels, with a typical differential input threshold of 100 mV, to LVTTL signal levels. LVDS provides low EMI at ultra low power di

封装/外壳：SC-74A，SOT-753 包装：管件 描述：IC RECEIVER 0/1 SOT23-5 集成电路（IC） 驱动器，接收器，收发器

LVDS 1-Bit, High-Speed Differential Receiver

文件：977.42 Kbytes Page：11 Pages

LVDS 1-Bit, High-Speed Differential Receiver

文件：977.42 Kbytes Page：11 Pages

封装/外壳：SC-74A，SOT-753 包装：管件 描述：IC RECEIVER 0/1 SOT23-5 集成电路（IC） 驱动器，接收器，收发器

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

Integrated Circuit FM IF TV Amp

Features: ● Excellent Limiting Characteristics ● High Gain ● High AM Rejection Ratio ● Wide Band Amp