位置：首页 > IC中文资料第12721页 > FFS
FFS价格
参考价格：￥145.1662
型号：FFS.00.113.CTCE31 品牌：LEMO 备注：这里有FFS多少钱，2025年最近7天走势，今日出价，今日竞价，FFS批发/采购报价，FFS行情走势销售排行榜，FFS报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon Carbide Schottky Diode 650 V, 6 A Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  |   | |
Silicon Carbide Schottky Diode 650 V, 6 A Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6A, 650 V, D2, D2PAK-2L SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSiliconCarbide | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6A, 650 V, D2, D2PAK-2L SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSiliconCarbide | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 650 V, 6 A SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSiliconCarbide | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 650 V, 6 A SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSiliconCarbide | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 650 V, 8 A Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 650 V, 8 A Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8A, 650 V, D2, D2PAK-2L SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSiliconCarbide | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8A, 650 V, D2, D2PAK-2L SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSiliconCarbide | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 650 V, 8 A SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSiliconCarbide | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 650 V, 8 A SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSiliconCarbide | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 1200 V, 10 A Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 1200 V, 10 A Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 650 V, 10 A Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 650 V, 10 A Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 650 V, 10 A Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 650 V, 10 A Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 650 V, 12 A Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 650 V, 12 A Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 1200 V, 20 A Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 1200 V, 20 A Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 650 V, 20 A SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSiliconCarbide | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 650 V, 20 A SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSiliconCarbide | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 650 V, 30 A Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 650 V, 30 A Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 650 V, 6 A SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSiliconCarbide | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 650 V, 6 A SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSiliconCarbide | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 1200 V, D1, DPAK-3L Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 1200 V, D1, DPAK-3L Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 650 V, 8 A SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSiliconCarbide | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 650 V, 8 A SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSiliconCarbide | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D1, DPAK-3L Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D1, DPAK-3L Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
SiC Schottky Diode DESCRIPTION ·HighSurgeCurrentCapacity ·NoReverseRecovery/NoForwardRecovery ·EaseofParalleling APPLICATIONS ·GeneralPurpose ·SMPS,SolarInverter,UPS ·PowerSwitchingCircuits | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
Silicon Carbide Schottky Diode 650 V, 10 A Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 650 V, 10 A Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 650 V, 20 A SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSiliconCarbide | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 650 V, 20 A SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSiliconCarbide | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 1200 V, 10 A Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 1200 V, 10 A Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D2, TO-247-2L Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 15 A, 1200 V, D1, TO-247-2L Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 15 A, 1200 V, D1, TO-247-2L Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, TO-247-2L Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, TO-247-2L Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 1200 V, 20 A Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, TO-247-3L Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, TO-247-2L Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 650 V, D2, TO-247-3L Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 650 V, D2, TO-247-2L Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 650 V, 10 A Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 1200 V, 5 A Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 1200 V, 5 A Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 650 V, 6 A Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 650 V, 8 A Description SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSil | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Schottky Barrier Rectifier FEATURES ·HighSurgeCurrentCapacity ·EasyOfParalleling ·NoReverseRecovery APPLICATIONS ·SMPS ·UPS ·PowerSwitchingCircuits | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Silicon Carbide Schottky Diode 650 V, 10 A SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSiliconCarbide | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide Schottky Diode 650 V, 10 A SiliconCarbide(SiC)SchottkyDiodesuseacompletelynew technologythatprovidessuperiorswitchingperformanceandhigher reliabilitycomparedtoSilicon.Noreverserecoverycurrent, temperatureindependentswitchingcharacteristics,andexcellent thermalperformancesetsSiliconCarbide | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, TO-220-2L Features •MaxJunctionTemperature175°C •AvalancheRated94mJ •HighSurgeCurrentCapacity •PositiveTemperatureCoefficient •EaseofParalleling •NoReverseRecovery/NoForwardRecovery •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant Applications • | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
FFS产品属性
- 类型
描述
- 型号
FFS
- 功能描述
环形推拉式连接器 TYPE C COAX CONT INSERT ONLY
- RoHS
否
- 制造商
Hirose Connector
- 产品类型
Connectors
- 系列
HR10
- 触点类型
Socket(Female)
- 外壳类型
Receptacle
- 触点数量
4
- 外壳大小
7
- 安装风格
Panel
- 端接类型
Solder
- 电流额定值
2 A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
D2PAK |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
ONSEMI |
两年内 |
N/A |
3200 |
原装现货,实单价格可谈 |
|||
ON/安森美 |
23+ |
TO-263 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
ON(安森美) |
2447 |
TO-263-3 |
115000 |
800个/圆盘一级代理专营品牌!原装正品,优势现货,长 |
|||
ON/安森美 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
||||
onsemi |
25+ |
D?PAK-3(TO-263-3) |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
|||
onsemi |
2025+ |
D2PAK-2 |
55740 |
||||
ST |
2405+ |
原厂封装 |
50000 |
15年芯片行业经验/只供原装正品:0755-83271535邹小姐 |
|||
24+ |
N/A |
65000 |
一级代理-主营优势-实惠价格-不悔选择 |
FFS芯片相关品牌
FFS规格书下载地址
FFS参数引脚图相关
- HDD
- h3000
- h20r120
- gps模块
- gpib
- GL850G
- gfd
- g508
- g500
- g221
- fx57
- FTTH
- fr107
- fpga开发板
- FPC连接器
- fp6290
- foxconn
- fml22s
- flotherm
- finder继电器
- FFSDA3
- FFSDA1
- FFSD-05-D-04.00-01-N
- FFSD-05-D-03.50-01-N
- FFSD-05-D-03.50-01-F-N
- FFSD-05-D-03.30-01-N
- FFSD-05-D-03.00-01-N
- FFSD-05-D-02.50-01-N
- FFSD-05-D-02.00-01-N
- FFSCC3
- FFSCC1
- FFSCB3
- FFSCB1
- FFSCA3
- FFSCA1
- FFSBC3
- FFSBC1
- FFSBB3
- FFSBB1
- FFSBA3
- FFSBA1
- FFSAC3
- FFSAC1
- FFSAB3
- FFSAB1
- FFSAA3
- FFSAA1
- FFS-20-QD05
- FFS-20-03
- FFS003
- FFS.F2.BB2.LCE30
- FFS.F2.BA2.LCT10
- FFS.01.250.DLAE31
- FFS.01.250.DLAE24
- FFS.00.250.NTCE52
- FFS.00.250.NTCE31
- FFS.00.250.CTCE31
- FFS.00.250.CTCE24
- FFS.00.250.CTAE24
- FFS.00.113.CTCE31
- FFR.1S.408.CLAE46
- FFPQT.SQUEEZEBOTTLE
- FFPF60SA60DSTU
- FFPF30UP20STU
- FFPF30UA60S
- FFPF20UP60DNTU_G
- FFPF20UP60DNTU
- FFPF20UP40S
- FFPF20UP30DNTU
- FFPF20UP20DNTU
- FFPF20UA60DN
- FFPF15S60STU
- FFPF12UP20DPTU
- FFPF10UP60STU
- FFPF10UP20STU
- FFPF10UA60ST
- FFPF10F150STU
- FFPF08S60STU
- FFPF08S60STTU
- FFPF08S60SNTU
- FFP12A
- FF-N30
- FF-N20
- FFMA207
- FFMA206
- FFMA205
- FFMA204
- FFMA203
- FFMA202
- FFMA201
- FFM307L
- FFM307
- FFM306L
- FFM306
- FFM305L
- FFM305
- FFM304L
- FFM304
- FFM303L
- FFM303
FFS数据表相关新闻
FFSH10120A-F155碳化硅（SiC）二极管
FFSH10120A-F155碳化硅（SiC）二极管
2024-1-5FFC3B07-30-T
优势渠道
2023-9-18FG-23329-D65
FG-23329-D65
2023-3-24FFSB10120A-F085
1200V碳化硅（SiC）二极管 安森美半导体二极管的优势包括更快的工作频率，更高的功率密度和更低的EMI
2020-4-8FFB0824VHE
FFB0824VHE，全新原装当天发货或门市自取0755-82732291.
2020-1-13FFB0824SHE
FFB0824SHE，全新原装当天发货或门市自取0755-82732291.
2020-1-13
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
