位置：首页 > IC中文资料第6223页 > FEPB6
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FEPB6 | FAST EFFICIENT PLASTIC RECTIFIER FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Glass passivated chip junctions ♦ Superfast recovery times for high efficiency ♦ Low power loss ♦ Low forward voltage, high current capability ♦ For | GE |   | |
FEPB6 | FAST EFFICIENT PLASTIC RECTIFIER | GE | | |
FAST EFFICIENT PLASTIC RECTIFIER FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Glass passivated chip junctions ♦ Superfast recovery times for high efficiency ♦ Low power loss ♦ Low forward voltage, high current capability ♦ For | GE | | ||
FAST EFFICIENT PLASTIC RECTIFIER FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Glass passivated chip junctions ♦ Superfast recovery times for high efficiency ♦ Low power loss ♦ Low forward voltage, high current capability ♦ For | GE | | ||
FAST EFFICIENT PLASTIC RECTIFIER FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Glass passivated chip junctions ♦ Superfast recovery times for high efficiency ♦ Low power loss ♦ Low forward voltage, high current capability ♦ For | GE | | ||
FAST EFFICIENT PLASTIC RECTIFIER FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Glass passivated chip junctions ♦ Superfast recovery times for high efficiency ♦ Low power loss ♦ Low forward voltage, high current capability ♦ For | GE | | ||
Dual Common-Cathode Ultrafast Rectifier Dual Common-Cathode Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263 | VishayVishay Siliconix 威世科技 | | ||
Dual Common-Cathode Ultrafast Rectifier Dual Common-Cathode Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263 | VishayVishay Siliconix 威世科技 | | ||
Dual Common-Cathode Ultrafast Rectifier Dual Common-Cathode Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263 | VishayVishay Siliconix 威世科技 | | ||
Dual Common-Cathode Ultrafast Rectifier Dual Common-Cathode Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263 | VishayVishay Siliconix 威世科技 | | ||
Dual Common-Cathode Ultrafast Rectifier Dual Common-Cathode Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263 | VishayVishay Siliconix 威世科技 | | ||
Dual Common-Cathode Ultrafast Rectifier Dual Common-Cathode Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263 | VishayVishay Siliconix 威世科技 | | ||
Dual Common-Cathode Ultrafast Rectifier Dual Common-Cathode Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263 | VishayVishay Siliconix 威世科技 | | ||
Dual Common-Cathode Ultrafast Rectifier Dual Common-Cathode Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263 | VishayVishay Siliconix 威世科技 | | ||
FAST EFFICIENT PLASTIC RECTIFIER | GE | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：托盘 描述：DIODE ARRAY GP 50V 6A TO263AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR） 描述：DIODE ARRAY GP 50V 6A TO263AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual Common Cathode Ultrafast Rectifier 文件：151.52 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | ||
Dual Common Cathode Ultrafast Rectifier 文件：151.52 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | |
FEPB6产品属性
- 类型
描述
- 型号
FEPB6
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
FAST EFFICIENT PLASTIC RECTIFIER
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
VISHAY |
25+23+ |
TO-263-3 |
68404 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
VISHAY |
24+ |
TO-263 |
50000 |
||||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
VISHAY |
23+ |
TO-263 |
41566 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
VISHAY |
0528+ |
TO-263 |
40 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY/威世 |
17+ |
TO-263 |
31518 |
原装正品 可含税交易 |
|||
VISHAY |
25+ |
TO-263- |
20 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
VISHAY/威世 |
23+ |
TO-263AB |
90000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
NEC |
23+ |
SOP-8 |
69820 |
终端可以免费供样,支持BOM配单! |
FEPB6规格书下载地址
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FEPB6数据表相关新闻
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2019-12-13
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