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FEP6价格
参考价格：￥9.0508
型号：FEP6DT/45 品牌：General 备注：这里有FEP6多少钱，2025年最近7天走势，今日出价，今日竞价，FEP6批发/采购报价，FEP6行情走势销售排行榜，FEP6报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FEP6 | FAST EFFICIENT PLASTIC RECTIFIER FAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage -50 to 200 Volts Forward Current - 6.0 Amperes FEATURES ♦Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Glass passivated chip junctions ♦ Superf | GE |   | |
FEP6 | FAST EFFICIENT PLASTIC RECTIFIER | GE | | |
FAST EFFICIENT PLASTIC RECTIFIER FAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage -50 to 200 Volts Forward Current - 6.0 Amperes FEATURES ♦Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Glass passivated chip junctions ♦ Superf | GE | | ||
Dual Common-Cathode Ultrafast Rectifier Dual Common-Cathode Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263 | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode Ultrafast Rectifier Dual Common-Cathode Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263 | VishayVishay Siliconix 威世威世科技公司 | | ||
FAST EFFICIENT PLASTIC RECTIFIER FAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage -50 to 200 Volts Forward Current - 6.0 Amperes FEATURES ♦Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Glass passivated chip junctions ♦ Superf | GE | | ||
FAST EFFICIENT PLASTIC RECTIFIER FAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage -50 to 200 Volts Forward Current - 6.0 Amperes FEATURES ♦Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Glass passivated chip junctions ♦ Superf | GE | | ||
Dual Common-Cathode Ultrafast Rectifier Dual Common-Cathode Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263 | VishayVishay Siliconix 威世威世科技公司 | | ||
FAST EFFICIENT PLASTIC RECTIFIER FAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage -50 to 200 Volts Forward Current - 6.0 Amperes FEATURES ♦Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Dual rectifier construction, positive center-tap ♦ Glass passivated chip junctions ♦ Superf | GE | | ||
Dual Common-Cathode Ultrafast Rectifier Dual Common-Cathode Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263 | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode Ultrafast Rectifier Dual Common-Cathode Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263 | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode Ultrafast Rectifier Dual Common-Cathode Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263 | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode Ultrafast Rectifier Dual Common-Cathode Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263 | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode Ultrafast Rectifier Dual Common-Cathode Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263 | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common-Cathode Ultrafast Rectifier | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 包装：卷带（TR） 描述：DIODE ARRAY GP 50V 6A TO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
封装/外壳：TO-220-3 包装：卷带（TR） 描述：DIODE ARRAY GP 100V 6A TO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
DIODE ARRAY GP 100V 6A TO220AB | VishayVishay Siliconix 威世威世科技公司 | | ||
Fast Rectifier 文件：243.35 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Dual Common Cathode Ultrafast Rectifier 文件：151.52 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common Cathode Ultrafast Rectifier 文件：151.52 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual Common Cathode Ultrafast Rectifier 文件：151.52 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | |
FEP6产品属性
- 类型
描述
- 型号
FEP6
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Dual Common-Cathode Ultrafast Rectifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
NA/ |
5488 |
原装现货,当天可交货,原型号开票 |
|||
GI |
25+ |
TO220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
GI |
24+ |
TO220 |
990000 |
明嘉莱只做原装正品现货 |
|||
VISHAY |
11+;08+ |
TO-220 |
1798 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY/威世 |
11+ |
TO-220 |
950 |
深圳原装进口无铅现货 |
|||
VISHAY |
25+23+ |
TO-220 |
15738 |
绝对原装正品全新进口深圳现货 |
|||
GS |
24+ |
TO-220 |
250 |
||||
VISHAY |
24+ |
TO-220 |
8000 |
新到现货，只做全新原装正品 |
|||
VISHAY |
24+ |
TO-220 |
5000 |
全新原装正品,现货销售 |
|||
Vishay |
17+ |
TO-220 |
6200 |
FEP6规格书下载地址
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2019-12-13
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