P-Channel 2.5 V Specified PowerTrench BGA MOSFET

General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ299P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transf

P-Channel 2.5 V Specified PowerTrench BGA MOSFET

P-channel enhancement mode MOS transistor

DESCRIPTION P-channel enhancement mode MOS transistor in a SOT363 SMD package. FEATURES • Low threshold voltage • High-speed switching • No secondary breakdown • Direct interface to C-MOS, TTL, etc. APPLICATIONS • Power management • Battery powered applications e.g. cellular phones • Gen

2.0 AMPS. FAST RECOVRY RECTIFIERS

SOFT RECOVERY PLASTIC RECTIFIER(VOLTAGE - 100 to 800 Volts CURRENT - 2.0 Amperes)

VOLTAGE 50 to 1000 Volts CURRENT 2.0 Amperes FEATURES • High current capability. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Void-free molded plastic package • Exceeds environmental standards of MIL-S-19500/228 • Fast switching for high efficiency. • In

Self-Calibrating 12-Bit Plus Sign Serial I/O A/D Converters with MUX and Sample/Hold

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Precision Reference

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