P-Channel 1.5V PowerTrench짰 WL-CSP MOSFET

General Description Designed on Fairchilds advanced 1.5V PowerTrench process with state of the art low pitch WLCSP packaging process, the FDZ191P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine ex

P-Channel 1.5V PowerTrenchTM WL-CSP MOSFET

General Description Designed on Fairchilds advanced 1.5V PowerTrench process with state of the art low pitch WLCSP packaging process, the FDZ191P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine ex

P 沟道，1.5V 指定，PowerTrench® WL-CSP MOSFET，-20V，-1A，85mΩ

FDZ191P的设计采用了飞兆先进的1.5 V PowerTrench工艺和一流的\"微间距\"WLCSP封装工艺，可最大限度地减少PCB空间和rDS(on)。 先进的WLCSP MOSFET彰显了封装技术的突破性进展，使该器件将卓越的传热特性、超薄型封装、低栅极电荷和低rDS(on)融合为一体。 . •最大rDS(on) = 85mΩ （VGS = -4.5V, ID = -1A）\n•最大 rDS(on) = 123 mΩ（VGS = -2.5 V、ID = -1 A 时）\n•最大 rDS(on) = 200 mΩ（VGS = -1.5 V、ID = -1 A 时）\n•仅占1.5mm²的PCB空间，比2 x 2 BGA所占空间少50%\n•超薄封装： 安装至PCB时，高度小于0.65 mm\n•符合 RoHS 标准;

P-Channel 1.5V PowerTrench짰 WL-CSP MOSFET

General Description Designed on Fairchilds advanced 1.5V PowerTrench process with state of the art low pitch WLCSP packaging process, the FDZ191P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine ex

PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ)

PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)

PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated Transistors in one package • Built in bias resistor (R1=22kΩ, R2=22kΩ)

PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ)

Silicon Complementary Transistors High Voltage Video Amplifier

Description: The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type package designed for high–voltage video and luminance output stages in TV receivers. Features: • High Collector–Emitter Breakdown Voltage: V(BR)CEO = 300V (Min) @ IC = 1mA • Low Coll

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE