双 N 沟道，2.5V 指定，PowerTrench™ MOSFET，20V，0.6A，700mΩ

此双N沟道MOSFET采用飞兆半导体先进的Power Trench工艺设计，可优化RDS(ON) @ VGS = 2.5v。 •600 mA，20 V\n•RDS(ON) = 700 mΩ@ VGS = 4.5 V\n•RDS(ON) = 850 mΩ @ VGS = 2.5 V\n•静电放电(ESD)保护二极管（注3）\n•符合RoHS标准;

Dual N-Channel 2.5V Specified PowerTrench MOSFET

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Dual N-Channel 2.5V Specified PowerTrench MOSFET

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Dual N-Channel 2.5V Specified PowerTrench MOSFET

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Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

Light Emitting Diode Miniature, Clear Red

Description: The NTE3000 is a high efficiency red source color device made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode in a two lead epoxy package with a clear lens. The NTE3000 is intended for high volume indicator light applications. Major usage is in applic

Silicon planar type

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