P 沟道 (-1.5V) 指定 PowerTrench® MOSFET -20V，-0.83A，0.5Ω

此单P沟道MOSFET采用飞兆半导体先进的Power Trench工艺设计而成，优化了DS(on)@VGS = –1.5 V。 •VGS = -4.5 V，ID = -0.83 A时，最大rDS(on) = 0.5Ω\n•VGS = -2.5 V，ID = -0.70 A时，最大rDS(on) = 0.7Ω\n•VGS = -1.8 V，ID = -0.43 A时，最大rDS(on) = 1.2Ω\n•VGS = -1.5 V，ID = -0.36 A时，最大rDS(on) = 1.8Ω\n•HBM ESD保护等级 = 1400kV （注3）\n•符合RoHS标准;

Single P-Channel (??.5 V) Specified PowerTrench짰 MOSFET ??0 V, ??.83 A, 0.5

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