P 沟道，-2.5V 指定，PowerTrench™ MOSFET，-20V，-0.15A，8Ω

此单P沟道MOSFET采用飞兆半导体先进的Power Trench工艺设计而成，优化了RDS(ON) @ VGS = -2.5v。 •-150 mA，20 V\n•RDS(ON) = 8 Ω @ VGS = -4.5 V\n•RDS(ON) = 12 Ω @ VGS = -2.5 V\n•静电放电(ESD)保护二极管（注3）\n•符合RoHS标准;

Single P-Channel (-2.5V) Specified PowerTrench MOSFET

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HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

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DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

WIDE BAND AMPLIFIER CHIPS

DESCRIPTION PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same frequency band. These devices are most suitable for the

Operational Amplifiers

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Operational Amplifiers

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