P-Channel 1.8V Specified PowerTrench MOSFET

General Description This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V). Features • –9 A, –12 V. RDS(ON) = 11 mΩ @ VGS

P-Channel 1.8V Specified PowerTrench MOSFET

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P-Channel 1.8V Specified PowerTrench MOSFET

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Both low on-resistance and good cost-performance achieved. Measuring instruments

FEATURES 1. Wide variation of 40V, 60V, 100V, 200V, 250V, 400V, 600V, 1,000V and 1,500V load voltage 2. Low on-resistance of typ. 0.6Ω (AQV251) 3. Reinforced insulation type of 5,000V I/O isolation available TYPICAL APPLICATIONS • Measuring instruments • Data communication equipment • Telep

HE (High-function Economy) Type [1-Channel (Form A) Type]

FEATURES 1. Highly sensitive and low on-resistance 2. Controls various types of loads such as relays, motors, lamps and solenoids. 3. Optical coupling for extremely high isolation 5,000 Vrms I/O isolation available. 4. Low-level off state leakage current 5. Eliminates the need for a p

MAGNETIC-LATCHING DPDT HALF-SIZE CRYSTAL CAN MILITARY RELAY

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Direct replacement for T6.8 Slide Base

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Intel짰 Core??2 Duo Mini-ITX with VGA/DVI/LVDS, 6 COM,and Dual LAN

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