N-Channel 25 V (D-S) MOSFET

Features Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) 6kV Human Body Model Compact industry standard SOT-23 surface mount package. VDS (V) = 25V ID= 2A RDS(ON)

N-Channel 25 V (D-S) MOSFET

General Description This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high

Digital FET, N-Channel

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N-Channel 25 V (D-S) MOSFET

Features Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) 6kV Human Body Model Compact industry standard SOT-23 surface mount package. VDS (V) = 25V ID= 2A RDS(ON)

N-Channel 25 V (D-S) MOSFET

General Description This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high

Digital FET, N-Channel

文件：65.73 Kbytes Page：4 Pages

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PRODUCT DESCRIPTION The MILTECH™ 303 USB hub enables the connectivity and communication between multiple USB devices in weight and space-constrained fixed-wing/rotor aircraft, soldier carry and harsh environments. This MIL-STD, rugged USB hub features 5 USB 3. ports, a dedicated External Pow

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