丝印代码：303；N-Channel 25 V (D-S) MOSFET

Features Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) 6kV Human Body Model Compact industry standard SOT-23 surface mount package. VDS (V) = 25V ID= 2A RDS(ON)

丝印代码：303；N-Channel 25 V (D-S) MOSFET

General Description This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high

N 沟道，数字 FET，25V，0.68A，0.45Ω

这些N沟道增强模式场效应晶体管采用飞兆专有的高单元密度DMOS技术生产。 这种高密度工艺专为最大限度地降低低栅极驱动条件下的通态电阻而定制。 该器件特别为使用一个锂或三个镉或NMH电池的电池电路应用设计。 该器件可作为一个转换器使用，或在紧凑型便携电子设备，例如无线电话和传呼器的高效微型分立DC/DC转换中使用。 该器件即使在栅极驱动电压低至2.5V时仍具有出色的通态电阻。 • • 25 V，0.68 A 连续电流，2 A 峰值。 \n• RDS(ON) = 0.45 Ω @ VGS= 4.5 V\n• RDS(ON) = 0.6 Ω @ VGS= 2.7 V• 栅极驱动电平要求极低，从而可在 3 V 电路中直接运行。 VGS(th) < 1.0 V。• 栅-源齐纳二极管增强耐静电放电(ESD)能力。 >6kV人体模型。• 紧凑型工业标准 SOT-23 表面贴装封装。• TN0200T 和 TN0201T 的备选方案。\n• Very low level gate drive requirements allowing direct operation in 3V;

Trans MOSFET N-CH 25V 0.68A 3-Pin SOT-23 T/R

场效应管

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SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 3.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 3.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

SUPERFAST RECOVERY RECTIFIERS(VOLTAGE - 50 to 600 Volts CURRENT - 3.0 Amperes)

SUPERFAST RECOVERY RECTIFIERS VOLTAGE 50 to 800 Volts CURRENT 3.0 Ampere FEATURES • Superfast recovery times-epitaxial construction. • Low forward voltage, high current capability. • Exceeds environmental standards of MIL-S-19500/228. • Hermetically sealed. • Low leakage.

HIGH EFFICIENCY RECTIFIERS(3.0A,50-400V)

High Efficiency Rectifiers

SCHOTTKY BARRIER RECTIFIERS(3.0A,20-60V)