60V N-Channel PowerTrench MOSFET

General Description These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

丝印代码：9945；Dual N-Channel 60-V (D-S) MOSFET

GENERAL FEATURES * Vos=60V,1o=6A * Roson

N 沟道，Power Trench® MOSFET，60V，3.5A，100mΩ

此类N沟道逻辑电平MOSFET特别为提高DC/DC转换器的整体效率而设计，采用同步或传统开关脉宽调制(PWM)控制器。 此类MOSFET同类似的RDS(on)规格的MOSFET相比，拥有更快的开关速度和更低的栅极电荷。 因此，这是一款更易于驱动且更安全（在高频段也是如此）的MOSFET，可实现具有更高总效率的DC/DC电源设计。 •3.5 A, 60 V\n•RDS(ON) = 0.100Ω @ VGS = 10 V\n•RDS(ON) = 0.200Ω @ VGS = 4.5 V\n•优化用于切换使用脉宽调制(PWM)控制器的DC/DC转换器\n•极快速开关\n•低栅极电荷;

Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：1.09093 Mbytes Page：9 Pages

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 3.3A, RDS(ON) = 100mΩ @VGS = 10V. RDS(ON) = 200mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface Mount Package.

1/6 Inch Optical Size CCIR Black-and-White Solid-State Imaging Device

Overview The LC9945 is a 1/6 inch optical size frame transfer CCD (Charge-coupled device) solid-state imaging device.

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These

Dual N-Channel 60-V (D-S), 175C MOSFET

文件：59.08 Kbytes Page：4 Pages

Dual N-Channel Enhancement Mode MOSFET

文件：242.04 Kbytes Page：3 Pages