双 N 和 P 沟道 PowerTrench® MOSFET 30V

这些双N和P沟道增强模式功率场效应晶体管采用飞兆半导体先进的PowerTrench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 这些器件非常适合需要线路内低功率损耗和快速开关的低电压和电池供电应用。 • Q1： N沟道 \n• 最大值 RDS(on) = 39mΩ（VGS = 4.5V，ID = 5.2A）Q2： P沟道\n• HBM静电放电保护等级为>3.5 kV\n• 符合RoHS标准;

Dual N & P-Channel PowerTrench짰 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m廓 Q2-P-Channel: -30 V, -4.5 A, 51 m廓

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Dual N and P-Channel Enhancement Mode Field Effect Transistor

General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. F

VOICE COIL MOTOR DRIVER

Providing control and drive of the voice coil motor used for head positioning in disk drive applications, the A8958CLB is a full-bridge driver which can be configured so that its output current is a direct function of an externally applied control voltage or current. This linear current control fu

VOICE COIL MOTOR DRIVER

Providing control and drive of the voice coil motor used for head positioning in disk drive applications, the A8958CLB is a full-bridge driver which can be configured so that its output current is a direct function of an externally applied control voltage or current. This linear current control fu

Dual Enhancement Mode Field Effect Transistor(N and P Channel)

FEATURES ● 30V, 5.3A, RDS(ON) = 35m Ω @ VGS = 10V. RDS(ON) = 50m Ω @ VGS = 4.5V. -30V, -4.0A, RDS(ON) = 65m Ω @ VGS = -10V. RDS(ON) = 100m Ω @ VGS = -4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handin

Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching perfo