丝印代码：FDS8958A；Dual N & P-Channel PowerTrench횘 MOSFET

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丝印代码：FDS8958；NP-Channel MOSFET

Features N-Channel VDS (V) = 30V ID = 7A (VGS = 10V) RDS(ON)

双 N 和 P 沟道 PowerTrench® MOSFET 30V

这些双通道N和P沟道增强模式功率场效应晶体管采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。这些器件非常适合需要线路内低功率损耗和快速开关的低电压和电池供电应用。 •Q1： N沟道7.0A，30VRDS(ON) =0.028 Ω @ VGS =10 VRDS(ON)=0.040 Ω @ VGS = 4.5 V\n•Q2： P沟道-5A，-30V RDS(ON) = 0.052 Ω @ VGS = -10 V RDS(ON) = 0.080 Ω @ VGS = -4.5 V\n•快速开关速度\n•高功率和处理能力，采用广泛使用的表面贴装封装;

Dual N and P-Channel Enhancement Mode Field Effect Transistor

General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. F

Dual N & P-Channel PowerTrenchO MOSFET

文件：526.11 Kbytes Page：8 Pages

Dual N & P-Channel PowerTrench MOSFET

文件：804.01 Kbytes Page：8 Pages

双 N 和 P 沟道 PowerTrench® MOSFET 30V

这些双通道N和P沟道增强模式功率场效应晶体管采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。这些器件非常适合需要线路内低功率损耗和快速开关的低电压和电池供电应用。 • Q1：N沟道\n•7.0 A、30 V、RDS(ON) = 0.040Ω(VGS = 4.5 V) Q2：P-沟道\n•快速开关速度\n•采用广泛使用的表面贴装封装，具有高功率和高电流处理能力\n•符合 AEC Q101 标准\n•符合 RoHS 标准;

Dual N and P-Channel PowerTrench MOSFET

文件：311.74 Kbytes Page：9 Pages

Dual N & P-Channel PowerTrenchO MOSFET

文件：526.11 Kbytes Page：8 Pages

Dual N & P-Channel PowerTrench MOSFET

文件：804.01 Kbytes Page：8 Pages

VOICE COIL MOTOR DRIVER

Providing control and drive of the voice coil motor used for head positioning in disk drive applications, the A8958CLB is a full-bridge driver which can be configured so that its output current is a direct function of an externally applied control voltage or current. This linear current control fu

VOICE COIL MOTOR DRIVER

Providing control and drive of the voice coil motor used for head positioning in disk drive applications, the A8958CLB is a full-bridge driver which can be configured so that its output current is a direct function of an externally applied control voltage or current. This linear current control fu

Dual Enhancement Mode Field Effect Transistor(N and P Channel)

FEATURES ● 30V, 5.3A, RDS(ON) = 35m Ω @ VGS = 10V. RDS(ON) = 50m Ω @ VGS = 4.5V. -30V, -4.0A, RDS(ON) = 65m Ω @ VGS = -10V. RDS(ON) = 100m Ω @ VGS = -4.5V. ● Super high dense cell design for extremely low RDS(ON). ● High power and current handin

Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching perfo