丝印代码：FDS8878；30V N-Channel MOSFET

Features High performance trench technology for extremely low rDS(on) Low gate charge High power and current handling capability RoHS Compliant VDS (V) =30V ID = 10.2A (VGS = 10V) RDS(ON)

N 沟道，PowerTrench® MOSFET，30V，10.2A，14mΩ

此N沟道MOSFET是专为使用同步或传统开关PWM控制器来改进DC/DC转换器整体功效而设计的。 已针对低栅极电荷、低rDS(ON) 和高速开关进行了优化。 •RDS(ON) = 14mΩ @ VGS = 10V @ ID = 10.2A\n•RDS(ON) = 17mΩ @ VGS = 4.5V @ ID = 9.3A\n•高性能沟道技术可实现极低的RDS(on)\n•低栅极电荷\n•高功率和高电流处理能力\n•符合RoHS标准;

N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Features ■ rDS(on)

N-Channel PowerTrench짰 MOSFET

文件：632.38 Kbytes Page：12 Pages

N-Channel PowerTrench MOSFET

General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Features ■ rDS(on)

N-Channel 30-V (D-S) MOSFET

Application Reverse Battery protection « Load switch « Power management PWM Application

N-Channel PowerTrench짰 MOSFET

文件：632.38 Kbytes Page：12 Pages

N-Channel PowerTrench MOSFET

文件：240.87 Kbytes Page：12 Pages

N-Channel PowerTrench MOSFET

文件：240.87 Kbytes Page：12 Pages

Low-Noise, Low-Dropout, 150mA Linear Regulators with ??982 Pinout

文件：111.43 Kbytes Page：8 Pages

Low-Noise, Low-Dropout, 150mA Linear Regulators with ??982 Pinout

文件：111.43 Kbytes Page：8 Pages

Low-Noise, Low-Dropout, 150mA Linear Regulators with ??982 Pinout

文件：111.43 Kbytes Page：8 Pages