General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.

Features

■ rDS(on) = 14mΩ, VGS = 10V, ID = 10.2A

■ rDS(on) = 17mΩ, VGS = 4.5V, ID = 9.3A

■ High performance trench technology for extremely low rDS(on)

■ Low gate charge

■ High power and current handling capability

■ RoHS Compliant

Applications

■ DC/DC converters