N-Channel PowerTrench짰 MOSFET 40 V, 18.6 A, 4.5 m廓

General Description The FDS8840NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. Features ■ Max rDS(on) = 4.5 mΩ at VGS

N-Channel Enhancement Mode Power MOSFET

Features  VDS= 40V, ID= 17.8 A RDS(ON)

N-Channel PowerTrench짰 MOSFET 40 V, 14.9 A, 7.0 m廓

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TREK 876 AND TREK 884

APPLICATIONS  Measurement of electrostatic surface charge build up  Manufacturing processes  Electronic assembly testing  Semiconductor material testing  Dissipative material testing  Automotive electronics testing  ESD Auditing and troubleshooting

DUAL 2:1 MUX/SPDT AUDIO SWITCH

GENERAL DESCRIPTION The ADG884 is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.4 Ω over the full temperature range, making the part an ideal solution for applications that requ

Mounting brackets required to meet UL/CSA external mounting requirements.

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Mounting brackets required to meet UL/CSA external mounting requirements.

文件：1.06838 Mbytes Page：4 Pages

Tape and Reel Packaging

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