Single P-Channel 2.5V Specified MOSFET

General Description This P-Channel enhancement mode power field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density processis especially tailored to minimize on-state resistance and provide superior switching performance. Featu

单 P 沟道，2.5V 指定，MOSFET，-20V，-5A，47mΩ

这些N沟道增强模式功率场效应晶体管采用飞兆半导体专有的高单元密度DMOS技术生产。 这种密度非常高的工艺是专为最大限度地降低导通阻抗并保持卓越开关性能而定制的。 •-5 A，-20 V\n•RDS(on) = 0.047 Ω @ VGS = -4.5 V\n•RDS(on) = 0.070 Ω @ VGS = -2.5 V\n•快速开关速度\n•高密度设计可实现极低的RDS(ON)\n•高功率和高电流处理能力;

Single P-Channel 2.5V Specified MOSFET

文件：84.29 Kbytes Page：5 Pages

Single P-Channel 2.5V Specified MOSFET

文件：84.29 Kbytes Page：5 Pages

Single P-Channel 2.5V Specified MOSFET

General Description This P-Channel enhancement mode power field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density processis especially tailored to minimize on-state resistance and provide superior switching performance. Featu

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -5.2A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 95mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface Mount Package.

Single P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes

Deflection processor for computer controlled TV receivers

文件：185.08 Kbytes Page：25 Pages