P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -20V, -5.2A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) = 95mΩ @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface Mount Package.

P-Channel Enhancement Mode Field Effect Transistor

Single P-Channel 2.5V Specified MOSFET

General Description This P-Channel enhancement mode power field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density processis especially tailored to minimize on-state resistance and provide superior switching performance. Featu

Single P-Channel 2.5V Specified MOSFET

General Description This P-Channel enhancement mode power field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density processis especially tailored to minimize on-state resistance and provide superior switching performance. Featu

Single P-Channel Enhancement Mode Field Effect Transistor

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. Thes

Deflection processor for computer controlled TV receivers

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