-30V P-Channel MOSFET

Features (VGS = -10V) VDS (V) =-30V ID = -11 A R DS(ON)

单 P 沟道，逻辑电平，PowerTrench® MOSFET，-30V，-11A，14mΩ

Single P-Channel, Logic Level, PowerTrenchTM MOSFET

文件：247.45 Kbytes Page：5 Pages

Single P-Channel, Logic Level, PowerTrenchTM MOSFET

文件：515.87 Kbytes Page：5 Pages

P-channel Enhancement Mode Power MOSFET

Features  VDS= -30V, ID= -14A RDS(ON)

Single P-Channel, Logic Level, PowerTrenchTM MOSFET

文件：515.87 Kbytes Page：5 Pages

30V P-Channel PowerTrench MOSFET

文件：107.86 Kbytes Page：5 Pages

P 沟道，PowerTrench® MOSFET，-30V，-11A，13mΩ

P-Channel PowerTrench MOSFET -30V, -11A, 13mOhm

文件：360.25 Kbytes Page：6 Pages

P-Channel PowerTrench짰 MOSFET

文件：457.63 Kbytes Page：6 Pages

P-Channel PowerTrench짰 MOSFET

文件：457.63 Kbytes Page：6 Pages

P-Channel 30-V (D-S) MOSFET

文件：998.63 Kbytes Page：9 Pages

SILICON DIOXIDE PASSIVATED

• IN6677 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/610 • 0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIER CHIPS • SILICON DIOXIDE PASSIVATED • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES , WITH THE EXCEPTION OF SOLDER REFLOW

0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIERS

• 1N6677UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/610 • 0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION

0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIERS

• 1N6677UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/610 • 0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED • LEADLESS PACKAGE FOR SURFACE MOUNT • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION

RF AMPLIFIER MODEL

文件：68.3 Kbytes Page：1 Pages

P-Channel Power Trench짰 MOSFET -30 V, -20 A, 14.4 m廓

文件：291.73 Kbytes Page：7 Pages