Single N-Channel 2.5V Specified PowerTrench MOSFET

General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and ba

丝印代码：FDS6570；30V N-Channel MOSFET

Features • Low gate charge (47nC typical). • Fast switching speed. •High performance trench technology for extremely low RDS(ON) • High power and current handling capability. (VGS = 4.5V) VDS (V) =30V ID = 15 A RDS(ON)

单 N 沟道，2.5V 指定，PowerTrench® MOSFET，20V，15A，7.5mΩ

此N沟道2.5V额定MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 这些器件非常适合需要线路内低功率损耗和快速开关的低电压和电池供电应用。 •15 A，20 V\n•低栅极电荷（典型值47nC）\n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON)\n•高功率和高电流处理能力;

Low Power 8-Bit, 3-Channel CMOS D/A Converters for Image Processing

文件：63.99 Kbytes Page：8 Pages

Low Power 8-Bit, 3-Channel CMOS D/A Converters for Image Processing

文件：63.99 Kbytes Page：8 Pages

BIT MAP LCD DRIVER

文件：818.58 Kbytes Page：26 Pages

BIT MAP LCD DRIVER

文件：818.58 Kbytes Page：26 Pages