丝印代码：FDS5351；N-Channel PowerTrench® MOSFET 60V, 6.1A, 35mΩ

Features Max rDS(on) = 35mΩ at VGS = 10V, ID = 6.1A Max rDS(on) = 42mΩ at VGS = 4.5V, ID = 5.5A High performance trench technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanc

N 沟道，PowerTrench® MOSFET，60V，6.1A，35mΩ

此N沟道MOSFET采用飞兆半导体先进的Power Trench®工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 •最大rDS(on) = 35mΩ （VGS = 10V, ID = 6.1A）\n•最大rDS(on) = 42mΩ （VGS = 4.5V, ID = 5.5A）\n•高性能沟道技术可实现极低的RDS(on)\n•100%经过UIL测试\n•符合RoHS标准;

N-Channel PowerTrench짰 MOSFET 60V, 6.1A, 35m廓

文件：237.28 Kbytes Page：6 Pages

5 mm (T1 3/4) MULTILED , Diffused

Features ● colorless, partly diffused package ● 2.54 mm lead spacing ● high signal efficiency possible by color change of the LED ● indication of different operation modes is possible by color change from green to yellow, orange and super-red ● both colors can be controlled separately ● sold

Silicon Controlled Rectifier (SCR) for High Speed Switching

Features: ● Fast Turn–Off Time ● High di/dt and dv/dt Capabilities ● Shorted–Emitter Gate–Cathode Construction ● Center Gate Construction

Quad 155 Mbit/s ATM and Packet Over SONET/SDH Physical Layer Device

DESCRIPTION The PM5351 S/UNI-TETRA SATURN User Network Interface is a monolithic integrated circuit that implements four channel SONET/SDH processing, ATM mapping and Packet over SONET/SDH mapping functions at the STS-3c (STM-1) 155.52 Mbit/s rate. FEATURES General • Single chip QUAD ATM User-

SATURN USER NETWORK INTERFACE (155-TETRA)

文件：1.39622 Mbytes Page：393 Pages

SATURN USER NETWORK INTERFACE (155-TETRA)

文件：1.39622 Mbytes Page：393 Pages