丝印代码：FDS4675；40V P-Channel PowerTrench짰 MOSFET

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40V P-Channel PowerTrench MOSFET

General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 20V). Features • –11 A, –40 V RDS(ON) = 0.013 Ω

P 沟道，PowerTrench® MOSFET，40V，-11A，13mΩ

此P沟道MOSFET是采用飞兆半导体先进的PowerTrench工艺生产的稳固栅极版本。 它已针对需要大范围栅极驱动电压额定值(4.5V – 20V)的功率管理应用进行了优化。 •-11A，-40 V。\n•RDS(ON) = 0.013 Ω @ VGS = -10 V\n•RDS(ON) = 0.017 Ω @ VGS = -4.5 V\n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON)\n•高功率和高电流处理能力;

40V P-Channel Power TrenchMOSFET

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P 沟道 PowerTrench® MOSFET -40V，-11A，13mΩ

此 P 沟道 MOSFET 是采用飞兆先进的 PowerTrench 工艺生产的稳固栅极版本。它已针对广泛栅极驱动电压额定值(4.5V – 20V)的电源管理应用进行了优化。 •–11 A，–40 V，RDS(ON) = 0.013 Ω（VGS = –10 V 时），RDS(ON) = 0.017 Ω（VGS = –4.5 V 时）\n•快速开关速度\n•高性能沟道技术可实现极低的RDS(ON)\n•高功率和高电流处理能力\n•符合 AEC Q101 标准\n•符合 RoHS 标准;

40V P-Channel Power TrenchMOSFET

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3??Single SPST Analog Switches

General Description The MAX4675/MAX4676 single analog switches feature 3Ω (max) on-resistance (RON) and 0.7Ω flatness when operating from dual ±5V supplies. These switches can handle Rail-to-Rail® analog signals. Off-leakage current is 0.1nA at TA = +25°C. The MAX4675/MAX4676 are ideal in low-dis

Ultra-Low EMI, Filterless, 2.65W, Mono, Class D Audio Power Amplifier with Spread Spectrum

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Ultra-Low EMI, Filterless, 2.65W, Mono, Class D Audio Power Amplifier with Spread Spectrum

文件：925.32 Kbytes Page：19 Pages

Ultra-Low EMI, Filterless, 2.65W, Mono, Class D Audio Power Amplifier with Spread Spectrum

文件：925.32 Kbytes Page：19 Pages